公开(公告)号：FR2969392A1

公开(公告)日：2012-06-22

申请号：FR1060638

申请日：2010-12-16

Applicant: ST MICROELECTRONICS SA ,  ST MICROELECTRONICS CROLLES 2

Inventor： MAZOYER PASCALE ,  HALIMAOUI AOMAR

IPC: H01M2/02 ,  H01M8/16

Abstract: Boîtier, comprenant un corps (1) comportant un premier élément (10) en silicium et un deuxième élément (20) en silicium poreux, au moins une première cavité (31) ménagée dans le silicium poreux, une première zone de contact électriquement conductrice (41) électriquement couplée à au moins une partie (310) d'au moins une paroi interne de ladite au moins une première cavité (31), une deuxième zone de contact électriquement conductrice (42) électriquement couplée à une portion (320) dudit deuxième élément (20) différente des parois internes de ladite au moins une première cavité (31), les deux zones de contact (41, 42) étant mutuellement électriquement isolées.

公开(公告)号：FR2969392B1

公开(公告)日：2013-02-08

申请号：FR1060638

申请日：2010-12-16

Applicant: ST MICROELECTRONICS SA ,  ST MICROELECTRONICS CROLLES 2

Inventor： MAZOYER PASCALE ,  HALIMAOUI AOMAR

IPC: H01M2/02 ,  H01M8/16

公开(公告)号：DE60302134D1

公开(公告)日：2005-12-08

申请号：DE60302134

申请日：2003-12-22

Applicant: ST MICROELECTRONICS SA

Inventor： HALIMAOUI AOMAR ,  BENSAHEL DANIEL

IPC: H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L29/51 ,  H01L21/02

Abstract: A localized region of material difficult to engrave (35) is formed in an IC by: forming a first layer (31) of silicon oxide of less than 1 nm thickness on a substrate (30); depositing a second selectively engravable layer (32); forming an opening (33); selectively growing Ge layer (34); depositing the material difficult to engrave; depositing a conducting layer to fill the opening in the Ge; smoothing to uncover the Ge; and eliminating the Ge and the first and second layers. The opening (33) is formed according to the motif of the localized region in the second layer. The Ge Layer (34) is grown around the opening in the second layer (32). The material which does not easily engrave will not deposit itself on the Ge.

公开(公告)号：FR2849531A1

公开(公告)日：2004-07-02

申请号：FR0216800

申请日：2002-12-27

Applicant: ST MICROELECTRONICS SA

Inventor： HALIMAOUI AOMAR ,  BENSAHEL DANIEL

IPC: H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L29/51

Abstract: A localized region of material difficult to engrave (35) is formed in an IC by: forming a first layer (31) of silicon oxide of less than 1 nm thickness on a substrate (30); depositing a second selectively engravable layer (32); forming an opening (33); selectively growing Ge layer (34); depositing the material difficult to engrave; depositing a conducting layer to fill the opening in the Ge; smoothing to uncover the Ge; and eliminating the Ge and the first and second layers. The opening (33) is formed according to the motif of the localized region in the second layer. The Ge Layer (34) is grown around the opening in the second layer (32). The material which does not easily engrave will not deposit itself on the Ge.

公开(公告)号：FR2826177B1

公开(公告)日：2004-07-02

申请号：FR0107861

申请日：2001-06-15

Applicant: ST MICROELECTRONICS SA

Inventor： BENSAHEL DANIEL ,  HALIMAOUI AOMAR

IPC: H01L21/02 ,  H01L21/306 ,  H01L23/15 ,  H01L27/08 ,  H05K1/03

公开(公告)号：FR2779006B1

公开(公告)日：2003-01-24

申请号：FR9806282

申请日：1998-05-19

Applicant: ST MICROELECTRONICS SA

Inventor： PEREA ERNESTO ,  BOMCHIL GUILLERMO ,  HALIMAOUI AOMAR

IPC: H01L21/822 ,  H01L21/02 ,  H01L21/3063 ,  H01L27/04 ,  H01L27/06 ,  H01L27/08 ,  H01L21/306

Abstract: The back face of the Si wafer that already incorporates transistors and an inductive surface on its front face, is brought into contact with an electrolyte. The electrolyte contains HF, at least one other acid such as acetic acid. The silicon on the back face is subjected to an anodic oxidation creating porous silicon over a predetermined height from the back face.

公开(公告)号：FR2779006A1

公开(公告)日：1999-11-26

申请号：FR9806282

申请日：1998-05-19

Applicant: ST MICROELECTRONICS SA

Inventor： PEREA ERNESTO ,  BOMCHIL GUILLERMO ,  HALIMAOUI AOMAR

IPC: H01L21/822 ,  H01L21/02 ,  H01L21/3063 ,  H01L27/04 ,  H01L27/06 ,  H01L27/08 ,  H01L21/306

Abstract: The back face of the Si wafer that already incorporates transistors and an inductive surface on its front face, is brought into contact with an electrolyte. The electrolyte contains HF, at least one other acid such as acetic acid. The silicon on the back face is subjected to an anodic oxidation creating porous silicon over a predetermined height from the back face.

公开(公告)号：FR2860919B1

公开(公告)日：2009-09-11

申请号：FR0350665

申请日：2003-10-09

Applicant: ST MICROELECTRONICS SA ,  COMMISSARIAT ENERGIE ATOMIQUE

Inventor： MONFRAY STEPHANE ,  HALIMAOUI AOMAR ,  CORONEL PHILIPPE ,  LENOBLE DAMIEN ,  FENOUILLET BERANGER CLAIRE

IPC: H01L21/762 ,  H01L21/336

Abstract: A region of monocrystalline silicon (20, 124 - 128) on insulator on silicon (24, 120) is destined to receive at least one component. The insulator (26) comprises some over-thickness (OT). Independent claims are also included for: (a) a component realised in such a region of monocrystalline silicon; (b) the fabrication of a semiconductor on insulator region; (c) the fabrication of a MOS transistor.

公开(公告)号：FR2860919A1

公开(公告)日：2005-04-15

申请号：FR0350665

申请日：2003-10-09

Applicant: ST MICROELECTRONICS SA ,  COMMISSARIAT ENERGIE ATOMIQUE

Inventor： MONFRAY STEPHANE ,  HALIMAOUI AOMAR ,  CORONEL PHILIPPE ,  LENOBLE DAMIEN ,  FENOUILLET BERANGER CLAIRE

IPC: H01L21/762 ,  H01L21/336

Abstract: A region of monocrystalline silicon (20, 124 - 128) on insulator on silicon (24, 120) is destined to receive at least one component. The insulator (26) comprises some over-thickness (OT). Independent claims are also included for: (a) a component realised in such a region of monocrystalline silicon; (b) the fabrication of a semiconductor on insulator region; (c) the fabrication of a MOS transistor.

公开(公告)号：FR3013995A1

公开(公告)日：2015-06-05

申请号：FR1361849

申请日：2013-11-29

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  ST MICROELECTRONICS SA

Inventor： HALIMAOUI AOMAR ,  VANDROUX LAURENT

IPC: B05D1/18 ,  B05D1/00 ,  C23C18/31 ,  H01L21/28

Abstract: Procédé de métallisation d'un matériau poreux comprenant le dépôt de matériau métallique en phase liquide, à l'aide d'une solution comprenant des ions métallique, les conditions de température de dépôt, de pH de la solution, et de concentration en ions métallique de la solution étant choisies de manière à permettre une vitesse de dépôt inférieure ou égale à 0.1 nm/min.