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公开(公告)号:GB2384125B
公开(公告)日:2004-08-25
申请号:GB0229787
申请日:2002-12-20
Applicant: ST MICROELECTRONICS SA
Inventor: GRASSET JEAN-CHARLES , BOSSU ERIC
Abstract: The polarization device has feedback control (SCOMP, ICOMP) of transconductance, so the time average of input potential of the amplifier transistor (Q1) tracks a reference potential corresponding to desired transistor quiescent current. Seen from the input of the transistor, the impedance (R1,ICTRL) of the surrounding circuit is low at low frequencies and high at radio frequencies.
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公开(公告)号:FR2834088A1
公开(公告)日:2003-06-27
申请号:FR0116600
申请日:2001-12-20
Applicant: ST MICROELECTRONICS SA
Inventor: GRASSET JEAN CHARLES , BOSSU ERIC
Abstract: The polarization device has feedback control (SCOMP, ICOMP) of transconductance, so the time average of input potential of the amplifier transistor (Q1) tracks a reference potential corresponding to desired transistor quiescent current. Seen from the input of the transistor, the impedance (R1,ICTRL) of the surrounding circuit is low at low frequencies and high at radio frequencies.
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公开(公告)号:FR2834088B1
公开(公告)日:2004-03-19
申请号:FR0116600
申请日:2001-12-20
Applicant: ST MICROELECTRONICS SA
Inventor: GRASSET JEAN CHARLES , BOSSU ERIC
Abstract: The polarization device has feedback control (SCOMP, ICOMP) of transconductance, so the time average of input potential of the amplifier transistor (Q1) tracks a reference potential corresponding to desired transistor quiescent current. Seen from the input of the transistor, the impedance (R1,ICTRL) of the surrounding circuit is low at low frequencies and high at radio frequencies.
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公开(公告)号:GB2384125A
公开(公告)日:2003-07-16
申请号:GB0229787
申请日:2002-12-20
Applicant: ST MICROELECTRONICS SA
Inventor: GRASSET JEAN-CHARLES , BOSSU ERIC
Abstract: The time-averaged base-emitter voltage of a main device Q1 is stabilized by use of a reference device Q2, the drain current of which is compared with a reference current SPOL by a transconductance amplifier ATRC providing bias current to the main and reference devices. The biasing loop ensures a low base node impedance at DC and at the modulation envelope frequency, thereby improving the amplifier's intermodulation, compression and noise performance. The loop also reduces thermal drift. The main transistors may be bipolar or MOS devices. The devices Q1 and Q2 may have an area ratio. The current SCTRL, which flows in R1, may be varied to adjust the current ratio of Q1 and Q2. The amplifier may be common-emitter or common-base.
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