公开(公告)号：WO02103772A2

公开(公告)日：2002-12-27

申请号：PCT/FR0202029

申请日：2002-06-13

Applicant: ST MICROELECTRONICS SA ,  KONINKL PHILIPS ELECTRONICS NV ,  MARTY MICHEL ,  FORTUIN ARNOUD ,  ARNAL VINCENT

Inventor： MARTY MICHEL ,  FORTUIN ARNOUD ,  ARNAL VINCENT

IPC: H01L21/3065 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  H01L21/764

CPC classification number: H01L21/76232 ,  H01L21/31612 ,  H01L21/76237 ,  H01L21/764

Abstract: The invention relates to a deep insulating trench, comprising side walls (11) and a base (10), embodied in a semiconductor substrate (1). The side walls (11) and the base (10) are coated with an electrically insulating material (12) which defines an empty cavity (13) and forms a plug (14) to seal the cavity (13). The side walls (11) are embodied with a neck (15) for determining the position of the plug (15) and a first section (16) which tapers out towards the neck (15) with increasing separation from the base (10). The above is particularly suitable for application in bipolar circuits and BiCMOS.

Abstract translation: 本发明涉及一种深绝缘沟槽，包括实施在半导体衬底（1）中的侧壁（11）和底座（10）。 侧壁（11）和基座（10）涂覆有限定空腔（13）并形成密封空腔（13）的塞子（14）的电绝缘材料（12）。 侧壁（11）具有用于确定插头（15）的位置的颈部（15）和与基部（10）分离的方式朝向颈部（15）逐渐变细的第一部分（16）。 以上特别适用于双极电路和BiCMOS。

公开(公告)号：DE60239200D1

公开(公告)日：2011-03-31

申请号：DE60239200

申请日：2002-06-13

Applicant: ST MICROELECTRONICS SA

Inventor： MARTY MICHEL ,  FORTUIN ARNOUD ,  ARNAL VINCENT

IPC: H01L21/3065 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  H01L21/764

公开(公告)号：FR2826179A1

公开(公告)日：2002-12-20

申请号：FR0107774

申请日：2001-06-14

Applicant: ST MICROELECTRONICS SA

Inventor： MARTY MICHEL ,  FORTUIN ARNOUD ,  ARNAL VINCENT

IPC: H01L21/3065 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  H01L21/764 ,  H01L27/04

Abstract: A deep insulating trench comprises side walls (11) and a base (10) in a semiconductor substrate (1). The side walls and base are covered with an electrically insulating material (12) which defines an empty cavity (13) and forms a plug (14) to seal the cavity. The side walls are configured with a neck (15) for determining the position of the plug and a first portion (16) which tapers out towards the neck with increasing separation from the base. Independent claims are also included for: (a) an integrated circuit incorporating such a deep insulating trench; (b) an electronic or electric apparatus incorporating the integrated circuit; and (c) a method for the realization of the deep insulating trench in a semiconductor substrate.