公开(公告)号：DE60117851D1

公开(公告)日：2006-05-04

申请号：DE60117851

申请日：2001-12-28

Applicant: ST MICROELECTRONICS SA

Inventor： GIMONET SOPHIE ,  DUCLOS FRANCK

IPC: H01L29/747

Abstract: The invention concerns a pulsed bistable bidirectional electronic switch comprising a monolithic semiconductor circuit formed from a substrate ( 1 ) whereof the rear surface (A 2 ) is coated with a metallization connected to earth. Said circuit comprises a vertical bidirectional switch (T 1 , T 2 ) provided with a first gate terminal (M 3 ), whereof the main electrode (A 1 ) on the side of the front surface is connected to a load and an alternating current supply; a horizontal thyristor (T 3 ) comprising an upper layer ( 4 ) of the vertical bidirectional switch, a first P-type region ( 11 ), and a second N-type region ( 12 ) formed in the first region; a second gate terminal (G 1 ) connected to one of the first and second regions, the other being connected to earth. A capacitor (C) is connected to the first gate terminal (G 3 ) and to the alternating current supply (VAC).

公开(公告)号：FR2803099B1

公开(公告)日：2002-08-16

申请号：FR9916289

申请日：1999-12-22

Applicant: ST MICROELECTRONICS SA

Inventor： GIMONET SOPHIE

IPC: H01L27/02 ,  H01L27/12 ,  H01L23/60

公开(公告)号：FR2803099A1

公开(公告)日：2001-06-29

申请号：FR9916289

申请日：1999-12-22

Applicant: ST MICROELECTRONICS SA

Inventor： GIMONET SOPHIE

IPC: H01L27/02 ,  H01L27/12 ,  H01L23/60

公开(公告)号：FR2819102B1

公开(公告)日：2003-04-04

申请号：FR0017295

申请日：2000-12-29

Applicant: ST MICROELECTRONICS SA

Inventor： GIMONET SOPHIE ,  DUCLOS FRANK

IPC: H01L29/747 ,  H01L29/744 ,  H03K17/72

Abstract: The invention concerns a pulsed bistable bidirectional electronic switch comprising a monolithic semiconductor circuit formed from a substrate ( 1 ) whereof the rear surface (A 2 ) is coated with a metallization connected to earth. Said circuit comprises a vertical bidirectional switch (T 1 , T 2 ) provided with a first gate terminal (M 3 ), whereof the main electrode (A 1 ) on the side of the front surface is connected to a load and an alternating current supply; a horizontal thyristor (T 3 ) comprising an upper layer ( 4 ) of the vertical bidirectional switch, a first P-type region ( 11 ), and a second N-type region ( 12 ) formed in the first region; a second gate terminal (G 1 ) connected to one of the first and second regions, the other being connected to earth. A capacitor (C) is connected to the first gate terminal (G 3 ) and to the alternating current supply (VAC).

公开(公告)号：FR2819102A1

公开(公告)日：2002-07-05

申请号：FR0017295

申请日：2000-12-29

Applicant: ST MICROELECTRONICS SA

Inventor： GIMONET SOPHIE ,  DUCLOS FRANK

IPC: H01L29/747 ,  H01L29/744 ,  H03K17/72

Abstract: The invention concerns a pulsed bistable bidirectional electronic switch comprising a monolithic semiconductor circuit formed from a substrate (1) whereof the rear surface (A2) is coated with a metallization connected to earth. Said circuit comprises a vertical bidirectional switch (T1, T2) provided with a first gate terminal (M3), whereof the main electrode (A1) on the side of the front surface is connected to a load and an alternating current supply; a horizontal thyristor (T3) comprising an upper layer (4) of the vertical bidirectional switch, a first P-type region (11), and a second N-type region (12) formed in the first region; a second gate terminal (G1) connected to one of the first and second regions, the other being connected to earth. A capacitor (C) is connected to the first gate terminal (G3) and to the alternating current supply (VAC).