公开(公告)号：JP2003031611A

公开(公告)日：2003-01-31

申请号：JP2002142521

申请日：2002-05-17

Applicant: St Microelectronics Sa ,  エスティマイクロエレクトロニクス エスエー

Inventor： VARROT MICHEL ,  BOUCHE GUILLAUME ,  GONELLA ROBERTO ,  SABOURET ERIC

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05095 ,  H01L2224/05096 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48475 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/85051 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  Y10S257/92 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015

Abstract: PROBLEM TO BE SOLVED: To provide the configuration of a connecting pad to minimize and remove the risk of peeling of a layer and a fine crack. SOLUTION: The integrated circuit comprises a plurality of metallization levels and connecting pads. Each connecting pad PLC is allocated in the highest metallization level. On the upper surface of the connecting pad, a metal layer CMS of the highest metallization level including an area for welding a connecting wire, at least one noncontinuous metal layer CMD4 in the lowest metallization level next to the above layer, a metal via VS connecting the non-continuous metal layer at the lower surface of the metal layer in the highest metallization level, and an insulation cover OX covering the non-continuous metal layer and the non-continuous part in addition to the inter-via between two metal layers, are respectively provided. Moreover, a reinforcing configuration STR is also included under a coupled region.

Abstract translation: 要解决的问题：提供连接垫的结构，以最小化并消除层剥离和细裂纹的风险。 解决方案：集成电路包括多个金属化层和连接焊盘。 每个连接焊盘PLC分配在最高的金属化级别。 在连接焊盘的上表面上，包括用于焊接连接线的区域的最高金属化水平的金属层CMS，与上述层相邻的最低金属化水平中的至少一个非连续金属层CMD4，金属通孔VS连接 在最高金属化水平的金属层的下表面处的非连续金属层和除了两个金属层之间的通孔之外覆盖非连续金属层和非连续部分的绝缘盖OX， 分别提供。 此外，加强配置STR也包括在耦合区域下。

公开(公告)号：FR2824954A1

公开(公告)日：2002-11-22

申请号：FR0106591

申请日：2001-05-18

Applicant: ST MICROELECTRONICS SA

Inventor： VARROT MICHEL ,  BOUCHE GUILLAUME ,  GONELLA ROBERTO ,  SABOURET ERIC

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485 ,  H01L23/48 ,  H01L21/71

Abstract: The connection pad (PLC) comprises a continuous metallic layer (CMS) at the level of upper metallization having a zone for soldering a connection wire, a reinforcement structure (STR) below the soldering zone comprising at least one discontinuous metallic layer (CMD4) at the level of immediately lower metallization connected by feedthroughs (VS) to the upper metallic layer, and an insulator coating (OX) encapsulating the discontinuous metallic layer and filling the intervening spaces between the metallic layers. The connection pad also comprises several peripheral metallic rings (CRP1-CRP4) at different metallization levels, where the highest-level metallic ring (CRP4) surrounds the discontinuous metallic layer (CMD4) at the same level of metallization, and peripheral metallic feedthroughs connect a peripheral zone (ZP) of the upper metallic layer to the metallic ring, and each metallic ring to that immediately adjacent. The discontinuous metallic layer is in the form of regularly distributed elementary patterns, and the general orientations of two adjacent patterns are different, for example orthogonal. Each pattern is formed of several metallic bands laid out in parallel, and each metallic band supports several feedthroughs. In the second embodiment, the reinforcement structure (STR) comprises several discontinuous metallic layers extending at different metallization levels and mutually connected by feedthroughs. Two superimposed patterns corresponding to two adjacent discontinuous metallic layers are mutually shifted or are of generally different orientations, for example orthogonal. The metallic layers are of aluminium, and the feedthroughs are of tungsten; or the metallic layers and the feedthroughs are of copper. The discontinuity of each discontinuous metallic layer is such that the density of copper is in the range 20-80%, within a window of about 50 micrometre x 50 micrometre.