公开(公告)号：FR2860099B1

公开(公告)日：2006-01-06

申请号：FR0310984

申请日：2003-09-18

Applicant: ST MICROELECTRONICS SA

Inventor： SKOTNICKI THOMAS ,  CORONEL PHILIPPE ,  HARTMANN JOEL

IPC: H01L21/336 ,  H01L27/11 ,  H01L29/423 ,  H01L29/786

公开(公告)号：FR2860099A1

公开(公告)日：2005-03-25

申请号：FR0310984

申请日：2003-09-18

Applicant: ST MICROELECTRONICS SA

Inventor： SKOTNICKI THOMAS ,  CORONEL PHILIPPE ,  HARTMANN JOEL

IPC: H01L21/336 ,  H01L29/423 ,  H01L29/786 ,  H01L27/11

Abstract: The method involves forming a temporary monocrystalline material portion over a surface (S) of a conducting substrate (100). A semiconductor material (2) is deposited on the portion of temporary material. A part of the temporary material is withdrawn via an access zone. An insulating coating is formed on parts of the material (2). A conducting material (4) is formed above and below a central part of the material (2). An independent claim is also included for a random access memory unit.