-
公开(公告)号:DE69835784D1
公开(公告)日:2006-10-19
申请号:DE69835784
申请日:1998-03-03
Applicant: ST MICROELECTRONICS SA
Inventor: KALNITSKY ALEXANDER , FERRANT RICHARD
IPC: H01L21/768 , H03K3/356 , H01L21/82 , H01L23/525 , H01L27/11
-
公开(公告)号:DE69527453D1
公开(公告)日:2002-08-29
申请号:DE69527453
申请日:1995-03-10
Applicant: ST MICROELECTRONICS SA
Inventor: KALNITSKY ALEXANDER
IPC: H01L21/764 , H01L21/3205 , H01L21/822 , H01L21/8234 , H01L23/52 , H01L27/02 , H01L27/04 , H01L27/088 , H01L29/78
Abstract: The integrated circuit structure includes two conducting elements (42,60) separated by a gap (68) which is filled with gas. A conducting column (60) is mounted by its base above a semiconductor substrate (21). The first conductor is separated from the column (60) by a gap. An insulating material (34,36) defines a cavity which contains a part of the lateral surface of the column (60) and a part facing the surface of the conductor (42). Connections (66,62) are provided to both the column (60) and the conductor (42).
-