公开(公告)号：DE69835784D1

公开(公告)日：2006-10-19

申请号：DE69835784

申请日：1998-03-03

Applicant: ST MICROELECTRONICS SA

Inventor： KALNITSKY ALEXANDER ,  FERRANT RICHARD

IPC: H01L21/768 ,  H03K3/356 ,  H01L21/82 ,  H01L23/525 ,  H01L27/11

公开(公告)号：DE69527453D1

公开(公告)日：2002-08-29

申请号：DE69527453

申请日：1995-03-10

Applicant: ST MICROELECTRONICS SA

Inventor： KALNITSKY ALEXANDER

IPC: H01L21/764 ,  H01L21/3205 ,  H01L21/822 ,  H01L21/8234 ,  H01L23/52 ,  H01L27/02 ,  H01L27/04 ,  H01L27/088 ,  H01L29/78

Abstract: The integrated circuit structure includes two conducting elements (42,60) separated by a gap (68) which is filled with gas. A conducting column (60) is mounted by its base above a semiconductor substrate (21). The first conductor is separated from the column (60) by a gap. An insulating material (34,36) defines a cavity which contains a part of the lateral surface of the column (60) and a part facing the surface of the conductor (42). Connections (66,62) are provided to both the column (60) and the conductor (42).