公开(公告)号：FR2778129B1

公开(公告)日：2000-07-21

申请号：FR9805615

申请日：1998-05-04

Applicant: ST MICROELECTRONICS SA

Inventor： LIAUZU LUC

IPC: B24B37/30 ,  B24D9/08 ,  B24B33/055 ,  H01L21/304

公开(公告)号：FR2780552B1

公开(公告)日：2000-08-25

申请号：FR9808152

申请日：1998-06-26

Applicant: ST MICROELECTRONICS SA

Inventor： PERRIN EMMANUEL ,  ROBERT FREDERIC ,  BANVILLET HENRI ,  LIAUZU LUC

IPC: B24B37/04 ,  B24B49/03 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/66 ,  H01L21/304

Abstract: A process for polishing, on a polishing machine and under defined polishing conditions, the external surface of at least one wafer of integrated circuits comprising a projecting feature covered over the entire surface of the wafer with an external layer of a material, consisting in calculating a main equivalent thickness equal to the main surface density of the projecting feature multiplied by the thickness of the latter; in polishing, under the defined polishing conditions, a reference wafer comprising an external layer of the material, having a uniform thickness and covering the surface of this reference wafer, so as to determine the rate of removal by the polishing machine corresponding to the ratio of the thickness removed to the polishing time elapsed; in calculating a polishing time equal to the ratio of the aforementioned equivalent thickness to the aforementioned rate of removal; in calculating a total equivalent thickness equal to the sum of the main equivalent thickness and of a complementary thickness of preset value; in calculating a polishing time equal to the ratio of this total-equivalent thickness to the aforementioned rate of removal; and in carrying out, under the polishing conditions, the polishing operation on at least one wafer to be polished for a duration which is equal to the aforementioned polishing time or which depends on this time.

公开(公告)号：FR2780552A1

公开(公告)日：1999-12-31

申请号：FR9808152

申请日：1998-06-26

Applicant: ST MICROELECTRONICS SA

Inventor： PERRIN EMMANUEL ,  ROBERT FREDERIC ,  BANVILLET HENRI ,  LIAUZU LUC

IPC: B24B37/04 ,  B24B49/03 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/66 ,  H01L21/304

Abstract: The control process involves calculation of equivalent thickness equal to the product of primary surface density (Dsp) and height (Hi) from the basic surface (10) of embedded metallic pattern (11). Attack velocity (V) is determined from removed thickness and polishing time for a reference chip, a calculation of polishing time from the equivalent thickness and the velocity, and control of process by obtained time or a function of it. The process may include a calculation of equivalent thickness complemented by a predetermined value, a calculation of the polishing time and the total equivalent thickness and velocity, and the control of process by the corrected polishing time or a function of it. The control of polishing process may include a measuring of remaining thickness, a subtraction of desired thickness to obtain a correction, a calculation of total equivalent thickness and the corrected polishing time. The process may also include a determination of secondary surface density (Dss), a calculation of the thickness correction and the total equivalent thickness, and a calculation of polishing time. The complemented thickness (Hs) may be obtained by measuring the recovered material (12) and subtracting the height of pattern (Hi) and the desired thickness (Ho), or by measuring the recovered material thickness (Hd) and subtracting the height of pattern (Hi).

公开(公告)号：FR2778129A1

公开(公告)日：1999-11-05

申请号：FR9805615

申请日：1998-05-04

Applicant: ST MICROELECTRONICS SA

Inventor： LIAUZU LUC

IPC: B24B37/30 ,  B24D9/08 ,  B24B33/055 ,  H01L21/304

Abstract: The head for polishing machine comprises a disc (14) with primary and secondary ring projections (24, 25) in peripheral zone supporting a membrane (16) in contact with a chip (26) pressed to the surface of rotary platform with input of an abrasive liquid. The chip (26) is held by the pressure of fluid in the head chamber on the membrane in axial direction. The primary ring projection (24) on disc (14) has at least one side inclined with respect to perpendicular direction, and the height of secondary ring projection (25) is less than that of the primary. The chip is unloaded by increasing the pressure in the head chamber. The thickness of chip is about 1.5 mm, and the diameter about 200 mm. The polishing process removes a thickness of about 1.5 micrometer. The primary ring projection (24) is about 5 mm from the rim of disc (14), and the thickness is about 1.5 mm. The secondary ring projection (25) is of height about 1 mm, and thickness about 0.5 mm.