公开(公告)号：FR2857154B1

公开(公告)日：2005-12-16

申请号：FR0308055

申请日：2003-07-02

Applicant: ST MICROELECTRONICS SA

Inventor： CHEMLA MARIUS ,  PETITDIDIER SEBASTIEN ,  LEVY DIDIER ,  ROUELLE FRANCOIS

IPC: H01L21/306 ,  H01L21/316

公开(公告)号：FR2857154A1

公开(公告)日：2005-01-07

申请号：FR0308055

申请日：2003-07-02

Applicant: ST MICROELECTRONICS SA

Inventor： CHEMLA MARIUS ,  PETITDIDIER SEBASTIEN ,  LEVY DIDIER ,  ROUELLE FRANCOIS

IPC: H01L21/306 ,  H01L21/316

Abstract: Treatment of a silicon based semiconductor material by a humid route comprises the formation of a layer of silicon oxide by putting the silicon surface in contact with a halogen solution, in an appropriate solvent. An independent claim is also included for an integrated circuit incorporating a layer of silicon oxide obtained.