公开(公告)号：FR2806834B1

公开(公告)日：2003-09-12

申请号：FR0003793

申请日：2000-03-24

Applicant: ST MICROELECTRONICS SA

Inventor： INARD ALAIN ,  ZULIAN DOMINIQUE ,  LEVY DIDIER ,  LUNENBORG MEINDERT ,  DE COSTER WALTER ,  OBERLIN JEAN CLAUDE

IPC: H01L21/76 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762 ,  H01L21/8242 ,  H01L27/08 ,  H01L27/108 ,  H01L29/78 ,  H01L21/8234

Abstract: Forming an insulating region (14) surrounding an active region (12) in a semiconductor substrate (10) involves forming a trench surrounding the active region in the substrate, filling the trench with a first material so as to create a protruding insulating zone that forms a peripheral edge around the active region, and beveling the edge of insulating region at the periphery of the active region. An Independent claim is given for a semiconductor device comprising a semiconductor substrate (10) and at least one insulating region (14) surrounding an active region (12) which is formed by the invented process.

公开(公告)号：FR2806834A1

公开(公告)日：2001-09-28

申请号：FR0003793

申请日：2000-03-24

Applicant: ST MICROELECTRONICS SA

Inventor： INARD ALAIN ,  ZULIAN DOMINIQUE ,  LEVY DIDIER ,  LUNENBORG MEINDERT ,  DE COSTER WALTER ,  OBERLIN JEAN CLAUDE

IPC: H01L21/76 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762 ,  H01L21/8242 ,  H01L27/08 ,  H01L27/108 ,  H01L29/78 ,  H01L21/8234

Abstract: Forming an insulating region (14) surrounding an active region (12) in a semiconductor substrate (10) involves forming a trench surrounding the active region in the substrate, filling the trench with a first material so as to create a protruding insulating zone that forms a peripheral edge around the active region, and beveling the edge of insulating region at the periphery of the active region. An Independent claim is given for a semiconductor device comprising a semiconductor substrate (10) and at least one insulating region (14) surrounding an active region (12) which is formed by the invented process.

公开(公告)号：FR2857154B1

公开(公告)日：2005-12-16

申请号：FR0308055

申请日：2003-07-02

Applicant: ST MICROELECTRONICS SA

Inventor： CHEMLA MARIUS ,  PETITDIDIER SEBASTIEN ,  LEVY DIDIER ,  ROUELLE FRANCOIS

IPC: H01L21/306 ,  H01L21/316

公开(公告)号：FR2857154A1

公开(公告)日：2005-01-07

申请号：FR0308055

申请日：2003-07-02

Applicant: ST MICROELECTRONICS SA

Inventor： CHEMLA MARIUS ,  PETITDIDIER SEBASTIEN ,  LEVY DIDIER ,  ROUELLE FRANCOIS

IPC: H01L21/306 ,  H01L21/316

Abstract: Treatment of a silicon based semiconductor material by a humid route comprises the formation of a layer of silicon oxide by putting the silicon surface in contact with a halogen solution, in an appropriate solvent. An independent claim is also included for an integrated circuit incorporating a layer of silicon oxide obtained.