公开(公告)号：FR2867610A1

公开(公告)日：2005-09-16

申请号：FR0450483

申请日：2004-03-10

Applicant: ST MICROELECTRONICS SA

Inventor： SAUTREUIL BERNARD ,  MARTY MICHEL ,  BONNOUVRIER JEROME ,  CARPENTIER JEAN FRANCOIS

IPC: H01L21/02 ,  H01L21/329 ,  H01L27/08 ,  H01L29/92 ,  H01L29/93

Abstract: The integral condenser, formed in the upper part of a semiconductor substrate (20) comprising at least one lightly-doped type N semiconductor layer (24) with its upper surface having a highly-doped type P region (35) bounded by an insulation zone (34), has one contact in the form of a metal layer (44) buried immediately beneath the type N semiconductor layer, and at least one vertical metal contact passing through the semiconductor layer as far as the metal layer and reaching the surface of the semiconductor layer outside the type P region. The metal layer and contact are of the same metal, selected from the group comprising tungsten, titanium nitrate, titanium, copper and their alloys. An independent claim is also included for the condenser fabrication process.