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    Control method for switch of capacitance switching device, for use as input circuit of analogue-digital converter, involves using IGFET for charging of capacitance
    1.
    发明专利
    Control method for switch of capacitance switching device, for use as input circuit of analogue-digital converter, involves using IGFET for charging of capacitance 未知

    公开(公告)号：FR2793970A1

    公开(公告)日：2000-11-24

    申请号：FR9906424

    申请日：1999-05-20

    Applicant: ST MICROELECTRONICS SA

    Inventor： JOUFFRE PIERRE OLIVIER ,  TELLIEZ ISABELLE ,  PAILLARDET FREDERIC

    IPC: H03K17/06 ,  H03K17/16

    Abstract: The method involves using an insulated gate field effect transistor (IGFET) for charging of a capacitance. The transistor receives an analogue input at its source. The gate is connected to a clock signal to control the conductance of the transistor, and hence the charging of the capacitor. The switch comprises at least one field-effect insulated-gate transistor (SW) with the source (S) connected to receive an input analogue signal (Vin), and controlled by the gate (G) according to a clock signal (CKS) to have successively ''on'' and ''off'' states. At the start of each half-period (PB) of the clock signal (CKS) the transistor is off, and at the start of the next half-period (PC) and during a predetermined interval the capacitor (CP) is precharged with a predetermined voltage (V), then during the remaining interval (DR) of the half-period the capacitor (CP) is effectively connected between the source (S) and the gate (G) of the transistor (SW) which is on by action of the gate-source voltage which is quasi-independent of the level of input signal (Vin), and at the end of the half-period (PC) the gate (G) of the transistor (SW) and the capacitor (CP) are effectively connected to the ground. Independent claims are included for a capacitive switching device.

    CALIBRATION DANS UN MODULE D'EMISSION RADIO FREQUENCE
    4.
    发明专利
    CALIBRATION DANS UN MODULE D'EMISSION RADIO FREQUENCE 未知

    公开(公告)号：FR2914515A1

    公开(公告)日：2008-10-03

    申请号：FR0754198

    申请日：2007-04-02

    Applicant: ST MICROELECTRONICS SA

    Inventor： BUSSON PIERRE ,  TELLIEZ ISABELLE ,  PAILLARDET FREDERIC

    IPC: H03D7/18 ,  G06F17/14 ,  H04L25/02

    Abstract: Module (1) d'émission radiofréquence adapté pour, dans une phase opérationnelle, générer un premier signal à émettre et transposer le signal sur une porteuse radiofréquence (FLO) en vue de son émission radio, et adapté pour, dans une phase de calibration, générer un second signal et transposer le second signal sur la porteuse radiofréquence (FLO)caractérisé en ce qu'il comporte un bloc (14) de calibration comportant un sous-échantillonneur adapté pour sous-échantillonner le second signal transposé (10) et un bloc (12) de calcul adapté pour calculer des coefficients de Transformée de Fourier représentatif du signal délivré par le sous-échantillonneur (10), en vue d'un traitement du premier signal à émettre, dans la phase opérationnelle, en fonction d'au moins certains desdits coefficients de Fourier calculés dans la phase de calibration.

    7.
    发明专利
    未知

    公开(公告)号：FR2793970B1

    公开(公告)日：2001-08-31

    申请号：FR9906424

    申请日：1999-05-20

    Applicant: ST MICROELECTRONICS SA

    Inventor： JOUFFRE PIERRE OLIVIER ,  TELLIEZ ISABELLE ,  PAILLARDET FREDERIC

    IPC: H03K17/06 ,  H03K17/16

    Abstract: With a switch including at least one insulated-gate field-effect transistor, an analog input signal is delivered on the source of the transistor and the transistor is controlled on its gate synchronized with a clock signal to successively turn it on and off. On the conclusion of each half-period of the clock signal during which the transistor is off, a precharging capacitor is precharged at the start of the next half-period and for a predetermined precharge duration, with a predetermined precharge voltage. Then, for the remaining duration of the half-period, the precharged capacitor is connected between the source and the gate of the transistor to turn it on under the action of a gate-source voltage which is almost independent of the level of the input signal. At the end of the half-period, the gate of the transistor and the precharging capacitor are grounded.

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