公开(公告)号：FR2974236A1

公开(公告)日：2012-10-19

申请号：FR1153319

申请日：2011-04-15

Applicant: ST MICROELECTRONICS SA ,  IBM

Inventor： DUTARTRE DIDIER ,  BREIL NICOLAS ,  SHEPARD JOSEPH

IPC: H01L23/12 ,  H01L21/70

Abstract: L'invention concerne un procédé de fabrication d'un transistor MOS sur silicium-germanium comprenant les étapes consistant à former par épitaxie sur le silicium-germanium (21) une mince couche de silicium (24) ; et procéder à une oxydation thermique propre à oxyder toute la mince couche de silicium et seulement cette mince couche de silicium.

公开(公告)号：AT521915T

公开(公告)日：2011-09-15

申请号：AT06819306

申请日：2006-11-07

Applicant: IBM

Inventor： CHUDZIK MICHAEL ,  SHEPARD JOSEPH

IPC: G03F7/00

Abstract: A stepper is combined with hardware that deposits a layer of material in the course of forming an integrated circuit, thus performing the deposition, patterning and cleaning without exposing the wafer to a transfer between tools and combining the function of three tools in a composite tool. The pattern-defining material is removed by the application of UV light through the mask of the stepper, thereby eliminating the bake and development steps of the prior art method. Similarly, a flood exposure of UV eliminates the cleaning steps of the prior art method.