公开(公告)号：JPH05252006A

公开(公告)日：1993-09-28

申请号：JP19823192

申请日：1992-07-24

Applicant: CONS RIC MICROELETTRONICA ,  ST MICROELECTRONICS SRL

Inventor： ZISA MICHELE ,  BELLUSO MASSIMILIANO ,  PAPARO MARIO

IPC: H03F3/217 ,  H03K4/58 ,  H03K5/02 ,  H03K17/06 ,  H03K17/687 ,  H03K19/017

Abstract: PURPOSE: To actualize the bootstrap circuit which drives a power MOS transistor(TR) with high-potential side constitution wherein the power MOS TR is able to operate with a low-level supply voltage when operating at a high switching frequency. CONSTITUTION: The bootstrap circuit for the power MOS TR of the high- potential side driving constitution includes a 1st capacitor C1 which can be charged to a 1st voltage level of the supply voltage of the power TR T1. A 2nd capacitor C2 is provided in combination with the 1st capacitor C1 so that a 1st voltage and a 2nd voltage higher than the threshold voltage of the power TR T1 can be used.

公开(公告)号：DE69226004D1

公开(公告)日：1998-07-30

申请号：DE69226004

申请日：1992-07-17

Applicant: CONS RIC MICROELETTRONICA ,  ST MICROELECTRONICS SRL

Inventor： ZISA MICHELE ,  BELLUSO MASSIMILIANO ,  PAPARO MARIO

IPC: H03K4/58 ,  H03K5/02 ,  H03K17/06 ,  H03F3/217 ,  H03K17/687 ,  H03K19/017

Abstract: In a bootstrap circuit for a power MOS transistor in the high driver configuration, comprising a first capacitor (C1) chargeable to a first voltage function of the supply voltage of the power transistor (T1), there is present a second capacitor (C2) combined with the first capacitor (C1) in such a way as to make available a second voltage higher than the first voltage and the threshold voltage of the power transistor (T1).

公开(公告)号：IT1251097B

公开(公告)日：1995-05-04

申请号：ITMI912045

申请日：1991-07-24

Applicant: ST MICROELECTRONICS SRL

Inventor： ZISA MICHELE ,  BELLUSO MASSIMILIANO ,  PAPARO MARIO

IPC: H03K4/58 ,  H03F3/217 ,  H03K5/02 ,  H03K17/06 ,  H03K17/687 ,  H03K19/017 ,  H03K

Abstract: In a bootstrap circuit for a power MOS transistor in the high driver configuration, comprising a first capacitor (C1) chargeable to a first voltage function of the supply voltage of the power transistor (T1), there is present a second capacitor (C2) combined with the first capacitor (C1) in such a way as to make available a second voltage higher than the first voltage and the threshold voltage of the power transistor (T1).