公开(公告)号：DE602006007095D1

公开(公告)日：2009-07-16

申请号：DE602006007095

申请日：2006-02-06

Applicant: ST MICROELECTRONICS SRL

Inventor： VISCONTI ANGELO ,  BELTRAMI SILVIA

IPC: G11C16/10

Abstract: A non-volatile memory device (100) is provided. Said memory device includes a matrix (105) of memory cells (110(i,j)) arranged in a plurality of rows and a plurality of columns, each memory cell including a transistor having a first conduction terminal, a second conduction terminal and a control terminal; a plurality of bit lines (BLj) each one associated with a column, each transistor of the column having the first conduction terminal coupled with the associated bit line; a plurality of first biasing lines (WLi) each one associated with a row, each transistor of the row having the control terminal coupled with the associated first biasing line; a plurality of second biasing lines (SLi) each one associated with at least one row, each transistor of the at least one row having the second conduction terminal coupled with the associated second biasing line; and means for programming (130b,130s,130w) at least one selected memory cell belonging to a selected row. The means for programming includes first biasing means (130w) for applying a programming voltage (Vpw) first biasing lines, and second biasing means (130s) for applying a program enabling voltage (GND) to a selected second biasing line associated with the selected row, each memory cell being programmed only when receiving both the programming voltage and the program enabling voltage.