公开(公告)号：JP2000114247A

公开(公告)日：2000-04-21

申请号：JP26193999

申请日：1999-09-16

Applicant: ST MICROELECTRONICS SRL

Inventor： BEGHIN LORENA ,  CANALI FRANCESCA ,  CAZZANIGA FRANCESCO ,  RIVA LUCA ,  ROMEO CARMELO

IPC: H01L21/302 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a dielectric layer etching processing method which does not damage a silicon substrate in a bottom part of a contact point opening. SOLUTION: A polysilicon layer 4 is formed on a dielectric layer 1, a photoresist mask layer 5 is formed on the polysilicon layer 4, the photoresist mask layer 5 is used as an etching mask, which selectively removes the polysilicon layer 4 to etch the polysilicon layer 4, the photoresist layer 5 is removed from the polysilicon layer 4, by use of the polysilicon layer 4 as a mask, the dielectric layer 1 is etched, and next the polysilicon layer 4 is converted into an etched transition metal silicide layer, so that the transition metal silicide layer is selectively removed from on the dielectric layer 1.

公开(公告)号：DE69738129D1

公开(公告)日：2007-10-25

申请号：DE69738129

申请日：1997-07-15

Applicant: ST MICROELECTRONICS SRL

Inventor： POLIGNANO MARIA LUISA ,  BRAMBILLA MARZIO ,  CAZZANIGA FRANCESCO ,  PAVIA GIUSEPPE ,  ZANDERIGO FEDERICA

IPC: H01L21/00 ,  H01L21/66

Abstract: The depth of a denuded layer in respect to a relatively defective bulk region of a monocrystalline semiconductor wafer is estimated in a nondestructive way by measuring effective diffusion length of injected excess minority charge carriers on a surface of the wafer having such a denuded layer and on a different portion of the surface of the wafer from where the denuded layer has been previously stripped-off by lapping and/or etching and by calculating the depth of the denuded layer through a best-fit procedure or through numerical processing of the measurement results on the basis of the diffusion equations of excess minority carriers.