公开(公告)号：JP2000114247A

公开(公告)日：2000-04-21

申请号：JP26193999

申请日：1999-09-16

Applicant: ST MICROELECTRONICS SRL

Inventor： BEGHIN LORENA ,  CANALI FRANCESCA ,  CAZZANIGA FRANCESCO ,  RIVA LUCA ,  ROMEO CARMELO

IPC: H01L21/302 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a dielectric layer etching processing method which does not damage a silicon substrate in a bottom part of a contact point opening. SOLUTION: A polysilicon layer 4 is formed on a dielectric layer 1, a photoresist mask layer 5 is formed on the polysilicon layer 4, the photoresist mask layer 5 is used as an etching mask, which selectively removes the polysilicon layer 4 to etch the polysilicon layer 4, the photoresist layer 5 is removed from the polysilicon layer 4, by use of the polysilicon layer 4 as a mask, the dielectric layer 1 is etched, and next the polysilicon layer 4 is converted into an etched transition metal silicide layer, so that the transition metal silicide layer is selectively removed from on the dielectric layer 1.

公开(公告)号：DE602004017958D1

公开(公告)日：2009-01-08

申请号：DE602004017958

申请日：2004-04-01

Applicant: ST MICROELECTRONICS SRL

Inventor： ALBA SIMONE ,  ROMEO CARMELO

IPC: G03F1/20 ,  G03F7/00 ,  H01L21/302

Abstract: A method of successfully defining (nanometric) geometries for plasma and/or ion implantation treatments of a semiconductor wafer has been found that is decisively more cost effective than the previously known approaches.A reusable laminar mask of a material that is mechanically selfsustaining, lithographically definable and dry etchable is fabricated by lithographically defining on a mechanically selfsustaining laminar substrate of a dry etchable material the desired geometries and subsequently dry etching it to produce the desired apertures through the whole thickness of the substrate. After removing the resist mask used for lithographically defining and etching the apertures through the laminar substrate, a layer of a refractory material having a substantial resistance to plasmas is deposited over the surface of the defined and etched laminar substrate that will eventually face toward the plasma or the ion source.The so fabricated mask (or mask electrode) is placed in contact or at a relatively small distance that may be comprised between 1 and 5 millimeters, from the surface of an ordinarily supported wafer to be processed and if the mask is held spaced from the surface of the wafer it is preferably coupled to an RF power source.Most preferably, the laminar substrate should be electrically conductive because, according to preferred embodiments of this invention, the reusable mask is fed with RF power during use.It has been found that it is possible to achieve an outstandingly higher productivity and a decisive cost abatement by avoiding the need of lithographically defining the required geometries on the semiconductor wafer as well as of defining the geometries by direct writing on a resist layer with a focused electron beam (electron brush).

公开(公告)号：ITMI991768A1

公开(公告)日：2001-02-05

申请号：ITMI991768

申请日：1999-08-05

Applicant: ST MICROELECTRONICS SRL

Inventor： ROMEO CARMELO ,  CANESTRARI PAOLO ,  FIORINO ANTONIO

IPC: G03F20060101 ,  G03F1/32 ,  G03F7/20 ,  G03F9/00

Abstract: A partially transparent layer made of phase shift material having octagonal window (17), is placed over the quartz plate of the attenuated phase shifting mask (Att.PSM). Independent claims are also included for the following: (1) method of defining contacts on integrated circuit device using electromagnetic wave; and (2) integrated circuit contact.

公开(公告)号：ITMI991768D0

公开(公告)日：1999-08-05

申请号：ITMI991768

申请日：1999-08-05

Applicant: ST MICROELECTRONICS SRL

Inventor： ROMEO CARMELO ,  CANESTRARI PAOLO ,  FIORINO ANTONIO

IPC: G03F20060101 ,  G03F1/32 ,  G03F7/20 ,  G03F9/00

Abstract: A partially transparent layer made of phase shift material having octagonal window (17), is placed over the quartz plate of the attenuated phase shifting mask (Att.PSM). Independent claims are also included for the following: (1) method of defining contacts on integrated circuit device using electromagnetic wave; and (2) integrated circuit contact.

公开(公告)号：IT1313154B1

公开(公告)日：2002-06-17

申请号：ITMI991768

申请日：1999-08-05

Applicant: ST MICROELECTRONICS SRL

Inventor： ROMEO CARMELO ,  CANESTRARI PAOLO ,  FIORINO ANTONIO

IPC: G03F20060101 ,  G03F1/32 ,  G03F7/20 ,  G03F9/00

Abstract: A partially transparent layer made of phase shift material having octagonal window (17), is placed over the quartz plate of the attenuated phase shifting mask (Att.PSM). Independent claims are also included for the following: (1) method of defining contacts on integrated circuit device using electromagnetic wave; and (2) integrated circuit contact.