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公开(公告)号：DE69933670D1
公开(公告)日：2006-11-30
申请号：DE69933670
申请日：1999-08-31
Applicant: ST MICROELECTRONICS SRL
Inventor： MATRANGA GIOVANNI , LO COCO LUCA , COMPAGNO GIUSEPPE
Abstract: This invention relates to a CMOS technology temperature sensor of a type which comprises a first circuit portion (2) arranged to generate an electric voltage signal whose value increases with the temperature to be sensed, and a second circuit portion (3) arranged to generate an electric voltage signal whose value decreases with the temperature to be sensed. A comparator (4) is provided as an output stage for comparing the values of both voltage signals. Advantageously, the generator element of the second circuit portion (3) is a vertical bipolar transistor connected in a diode configuration.
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