1.
    发明专利
    未知

    公开(公告)号:ITMI992623D0

    公开(公告)日:1999-12-17

    申请号:ITMI992623

    申请日:1999-12-17

    Inventor: LO COCO LUCA

    Abstract: A CMOS technology voltage booster having plurality of charge-pump stages cascade connected together and driven by a plurality of phases, each stage having a terminating input node and a terminating output node, with at least one transistor connected therebetween that has its control terminal connected to an internal circuit node of the same stage and applied one of the phases. This voltage booster further includes a pair of additional circuit elements for transferring, onto the internal node, a potential exceeding the voltage at the input node by at least one threshold. A first of the additional elements is essentially a MOS transistor having its control terminal connected to the control terminal of that transistor that is connected between the input and the output of the stage, while the second additional element is an auxiliary capacitor having one end connected directly to the first additional element and connected to the internal node through a transistor.

    2.
    发明专利
    未知

    公开(公告)号:DE69933670D1

    公开(公告)日:2006-11-30

    申请号:DE69933670

    申请日:1999-08-31

    Abstract: This invention relates to a CMOS technology temperature sensor of a type which comprises a first circuit portion (2) arranged to generate an electric voltage signal whose value increases with the temperature to be sensed, and a second circuit portion (3) arranged to generate an electric voltage signal whose value decreases with the temperature to be sensed. A comparator (4) is provided as an output stage for comparing the values of both voltage signals. Advantageously, the generator element of the second circuit portion (3) is a vertical bipolar transistor connected in a diode configuration.

    3.
    发明专利
    未知

    公开(公告)号:IT1313877B1

    公开(公告)日:2002-09-24

    申请号:ITMI992623

    申请日:1999-12-17

    Inventor: LO COCO LUCA

    Abstract: A CMOS technology voltage booster having plurality of charge-pump stages cascade connected together and driven by a plurality of phases, each stage having a terminating input node and a terminating output node, with at least one transistor connected therebetween that has its control terminal connected to an internal circuit node of the same stage and applied one of the phases. This voltage booster further includes a pair of additional circuit elements for transferring, onto the internal node, a potential exceeding the voltage at the input node by at least one threshold. A first of the additional elements is essentially a MOS transistor having its control terminal connected to the control terminal of that transistor that is connected between the input and the output of the stage, while the second additional element is an auxiliary capacitor having one end connected directly to the first additional element and connected to the internal node through a transistor.

    4.
    发明专利
    未知

    公开(公告)号:ITMI992623A1

    公开(公告)日:2001-06-18

    申请号:ITMI992623

    申请日:1999-12-17

    Inventor: LO COCO LUCA

    Abstract: A CMOS technology voltage booster having plurality of charge-pump stages cascade connected together and driven by a plurality of phases, each stage having a terminating input node and a terminating output node, with at least one transistor connected therebetween that has its control terminal connected to an internal circuit node of the same stage and applied one of the phases. This voltage booster further includes a pair of additional circuit elements for transferring, onto the internal node, a potential exceeding the voltage at the input node by at least one threshold. A first of the additional elements is essentially a MOS transistor having its control terminal connected to the control terminal of that transistor that is connected between the input and the output of the stage, while the second additional element is an auxiliary capacitor having one end connected directly to the first additional element and connected to the internal node through a transistor.

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