公开(公告)号：DE60222891T2

公开(公告)日：2008-07-24

申请号：DE60222891

申请日：2002-08-13

Applicant: ST MICROELECTRONICS SRL

Inventor： DE AMBROGGI LUCA ,  CONDEMI CARMELO

IPC: G11C29/00 ,  G11C16/34

Abstract: The nonvolatile storage device (1) is made up of a memory array (2) divided into a plurality of data-storage units (19a) and a plurality of redundancy-storage units (19b) for replacing respective failed data-storage units. A control unit (16) detects the functionality of the data-storage units and, in case of failure, enables a redundancy-detection unit (15) having a plurality of volatile-memory elements (22) connected through a sequential daisy-chain connection. A nonvolatile memory unit (CAM 18) stores, in a nonvolatile way, the redundancy information through a data bus (11), connected both to the redundancy-detection unit (15) and to the nonvolatile memory unit; in the event of failure, the redundancy-detection unit (15) transfers the addresses of the failed data-storage unit (19a) to the nonvolatile memory unit (18) for their nonvolatile storage.

公开(公告)号：DE60222891D1

公开(公告)日：2007-11-22

申请号：DE60222891

申请日：2002-08-13

Applicant: ST MICROELECTRONICS SRL

Inventor： DE AMBROGGI LUCA ,  CONDEMI CARMELO

IPC: G11C29/00 ,  G11C16/34

Abstract: The nonvolatile storage device (1) is made up of a memory array (2) divided into a plurality of data-storage units (19a) and a plurality of redundancy-storage units (19b) for replacing respective failed data-storage units. A control unit (16) detects the functionality of the data-storage units and, in case of failure, enables a redundancy-detection unit (15) having a plurality of volatile-memory elements (22) connected through a sequential daisy-chain connection. A nonvolatile memory unit (CAM 18) stores, in a nonvolatile way, the redundancy information through a data bus (11), connected both to the redundancy-detection unit (15) and to the nonvolatile memory unit; in the event of failure, the redundancy-detection unit (15) transfers the addresses of the failed data-storage unit (19a) to the nonvolatile memory unit (18) for their nonvolatile storage.

公开(公告)号：DE60106780D1

公开(公告)日：2004-12-02

申请号：DE60106780

申请日：2001-12-28

Applicant: ST MICROELECTRONICS SRL

Inventor： GIOVE SALVATORE ,  DE AMBROGGI LUCA ,  NICOSIA SALVATORE ,  TOMAIUOLO FRANCESCO ,  PROMOD KUMAR ,  PIAZZA GIUSEPPE ,  PIPITONE FRANCESCO

IPC: G11C7/06 ,  G11C7/08 ,  G11C16/28

Abstract: A circuit (165) is proposed for controlling a reference node (Nr) in a sense amplifier (145) switchable between an operative condition and a stand-by condition, the reference node providing a reference voltage in the operative condition. The circuit includes means (Cp) for bringing the reference node to a starting voltage upon entry into the stand-by condition, first means (Rda1,Rda2) for keeping the reference node at a pre-charging voltage in the stand-by condition, second means (Rdb1,Rdb2) for providing a comparison voltage closer to the pre-charging voltage than the starting voltage, pulling means (Mu1) for pulling the reference node towards a power supply voltage, and control means (210) for activating the pulling means upon entry into the stand-by condition and for disabling the pulling means when the voltage at the reference node reaches the comparison voltage.