公开(公告)号：ITTO20011038A1

公开(公告)日：2003-04-30

申请号：ITTO20011038

申请日：2001-10-30

Applicant: ST MICROELECTRONICS SRL

Inventor： VIGNA BENEDETTO ,  VISALLI GIUSEPPE ,  COMBI CHANTAL ,  FIORITO MATTEO ,  MOTTURA MARTA

IPC: H01L21/762 ,  H01L21/764 ,  H01L27/08

Abstract: A process for manufacturing a semiconductor wafer integrating electronic devices and a structure for electromagnetic decoupling are disclosed. The method includes providing a wafer of semiconductor material having a substrate; forming a plurality of first mutually adjacent trenches, open on a first face of the wafer, which have a depth and a width and define walls); by thermal oxidation, completely oxidizing the walls and filling at least partially the first trenches, so as to form an insulating structure of dielectric material; and removing one portion of the substrate comprised between the insulating structure and a second face of the wafer, opposite to the first face of the wafer.