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公开(公告)号：JPH06196944A
公开(公告)日：1994-07-15
申请号：JP16232693
申请日：1993-06-30
Applicant: ST MICROELECTRONICS SRL
Inventor： FLOCCHI CARLO , TORELLI GUIDO
Abstract: PURPOSE: To attain the output of programmable voltage in optimum state by providing a controlled current generator and an operational amplifier among a resistor element between two terminal of power source, serial circuit means and node to be linked with one side of power supply terminal and one side of resistor element. CONSTITUTION: The operational amplifier comprises a gain step AV and a source follower means connected to it (transistor MOUT biased by a constant current generator IB). In this case, a current iOUT of transistor MOUT is supplied to a load every time because of output branch bias current IB and made equal with the current of bit line selective transistor. The current iOUT is reflected on a constant current generator G1 and passed through two dummy transistors MWd' and MBd' and a voltage drop VBL generated at bit line selecting transistors MW and MB is compensated. The contribution from a bias current IB to a current iS to be injected into dummy transistors MWd' and MBd' is started from the contribution to a voltage value VREF despite of current value supplied to the load by a voltage regulator.
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公开(公告)号：DE69229995D1
公开(公告)日：1999-10-21
申请号：DE69229995
申请日：1992-06-30
Applicant: ST MICROELECTRONICS SRL
Inventor： FLOCCHI CARLO , TORELLI GUIDO
Abstract: A voltage regulator for electrically programmable, non-volatile memory devices, having an output terminal connected to a power supply line for programming the state of at least one memory element through at least one selection circuit means (MW,MB) and comprising at least first (R1) and second (R2) resistive elements connected between first and second terminals of a voltage supply. The regulator further comprises at least a second circuit means (MWd,MBd) being the homolog of the selection circuit means for programming the memory element, said second circuit means being connected serially to the resistive elements (R1,R2) across the two terminals of the voltage supply. Also provided is at least one controlled current generator (G1,G2) connected between one of the two voltage supply terminals and a linking node to one of the resistive elements and an operational amplifier (A) whose non-inverting (+) input is connected to a linking node to at least one of the resistive elements and whose output terminal is the output terminal of the regulator.
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公开(公告)号：DE69229995T2
公开(公告)日：2000-03-16
申请号：DE69229995
申请日：1992-06-30
Applicant: ST MICROELECTRONICS SRL
Inventor： FLOCCHI CARLO , TORELLI GUIDO
Abstract: A voltage regulator for electrically programmable, non-volatile memory devices, having an output terminal connected to a power supply line for programming the state of at least one memory element through at least one selection circuit means (MW,MB) and comprising at least first (R1) and second (R2) resistive elements connected between first and second terminals of a voltage supply. The regulator further comprises at least a second circuit means (MWd,MBd) being the homolog of the selection circuit means for programming the memory element, said second circuit means being connected serially to the resistive elements (R1,R2) across the two terminals of the voltage supply. Also provided is at least one controlled current generator (G1,G2) connected between one of the two voltage supply terminals and a linking node to one of the resistive elements and an operational amplifier (A) whose non-inverting (+) input is connected to a linking node to at least one of the resistive elements and whose output terminal is the output terminal of the regulator.
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