公开(公告)号：JP2002230986A

公开(公告)日：2002-08-16

申请号：JP2002006161

申请日：2002-01-15

Applicant: ST MICROELECTRONICS SRL

Inventor： FRULIO MASSIMILIANO ,  VILLA CORRADO ,  BARTOLI SIMONE

IPC: G11C16/02 ,  G11C7/10 ,  G11C7/22 ,  G11C16/32

Abstract: PROBLEM TO BE SOLVED: To provide a nonvolatile memory which can perform synchronous reading with a frequency higher than a frequency which can be used now for data stored in a nonvolatile memory and which is operated by a burst reading mode. SOLUTION: This nonvolatile memory (10) is provided with an input pin (2) receiving an external clock signal supplied by a user, an input buffer (4) receiving the external clock signal and supplying an intermediate clock signal relating to the external clock signal and being delayed, and a delayed lock loop (12) receiving the intermediate clock signal and supplying the intermediate clock signal distributed in the nonvolatile memory and synchronizing with the external clock signal substantially.