公开(公告)号：DE69530077D1

公开(公告)日：2003-04-30

申请号：DE69530077

申请日：1995-07-31

Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

Inventor： PALARA SERGIO ,  GRAZIANO VITO

IPC: H02M7/5383 ,  H03K17/16 ,  H03K17/284 ,  H05B41/282 ,  H05B41/00 ,  H03K17/687 ,  H05B41/295

Abstract: The principle on which the start up circuit of this invention operates is that of causing the MOS transistor (M2) to be turned on by sensing local electrical quantities thereof, specifically the potential at the drain terminal (D) of the MOS transistor (M2). The basic idea is to inject a small current into the control terminal (G) when the potential at the drain terminal (D) is high. For the purpose, an electric network (SN) is arranged to couple these two terminals together.

公开(公告)号：DE69530077T2

公开(公告)日：2003-11-27

申请号：DE69530077

申请日：1995-07-31

Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

Inventor： PALARA SERGIO ,  GRAZIANO VITO

IPC: H02M7/5383 ,  H03K17/16 ,  H03K17/284 ,  H05B41/282 ,  H05B41/00 ,  H03K17/687 ,  H05B41/295

Abstract: The principle on which the start up circuit of this invention operates is that of causing the MOS transistor (M2) to be turned on by sensing local electrical quantities thereof, specifically the potential at the drain terminal (D) of the MOS transistor (M2). The basic idea is to inject a small current into the control terminal (G) when the potential at the drain terminal (D) is high. For the purpose, an electric network (SN) is arranged to couple these two terminals together.

公开(公告)号：ITUB20153275A1

公开(公告)日：2017-02-28

申请号：ITUB20153275

申请日：2015-08-28

Applicant: ST MICROELECTRONICS SRL

Inventor： RUGGERI ROSARIO ,  GRAZIANO VITO

IPC: H03K17/12

公开(公告)号：DE69523908T2

公开(公告)日：2002-07-25

申请号：DE69523908

申请日：1995-07-31

Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

Inventor： PALARA SERGIO ,  GRAZIANO VITO

IPC: H03K17/0412 ,  H03K17/30 ,  H05B41/282 ,  H05B41/00 ,  H03K17/687 ,  H02M7/5383

Abstract: A first principle on which the driver circuit of this invention operates is to delay the turning on of the MOS transistor (M2) by utilizing the time-wise pattern of the circuit input (G) signal rather than generating a delay within the circuit itself. The basic idea is one of using a threshold type of circuit element and arranging for no current to flow toward or from, depending on the type of the MOS transistor, the control terminal before the voltage at the circuit input exceeds a predetermined value. This is achieved, for example, by coupling a Zener diode (D1) serially to the control terminal. Where the input signal is of a kind which increases with a degree of uniformity, the time required to exceed that threshold will correspond to the desired delay. Thus, the driver circuit can match the dynamic range of the input signal automatically.

公开(公告)号：DE69523908D1

公开(公告)日：2001-12-20

申请号：DE69523908

申请日：1995-07-31

Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

Inventor： PALARA SERGIO ,  GRAZIANO VITO

IPC: H03K17/0412 ,  H03K17/30 ,  H05B41/282 ,  H05B41/00 ,  H03K17/687 ,  H02M7/5383

Abstract: A first principle on which the driver circuit of this invention operates is to delay the turning on of the MOS transistor (M2) by utilizing the time-wise pattern of the circuit input (G) signal rather than generating a delay within the circuit itself. The basic idea is one of using a threshold type of circuit element and arranging for no current to flow toward or from, depending on the type of the MOS transistor, the control terminal before the voltage at the circuit input exceeds a predetermined value. This is achieved, for example, by coupling a Zener diode (D1) serially to the control terminal. Where the input signal is of a kind which increases with a degree of uniformity, the time required to exceed that threshold will correspond to the desired delay. Thus, the driver circuit can match the dynamic range of the input signal automatically.