公开(公告)号：JPH0698529A

公开(公告)日：1994-04-08

申请号：JP5248293

申请日：1993-03-12

Applicant: ST MICROELECTRONICS SRL

Inventor： GARIBOLDI ROBERTO ,  LEONE MARCELLO

IPC: H02M1/08 ,  H03F3/26 ,  H03K17/06 ,  H03K17/687

Abstract: PURPOSE: To obtain a driver circuit operating a MOS half bridge, even at a low supply voltage. CONSTITUTION: A driver circuit 20 has a linearity voltage regulator 21 which is connected to a power-supply line 29 and supplying reference voltage VREF, a first input terminal 36 connected with the power supply line 29, a second input terminal 46, to which a reference voltage is applied, and a charge-pump circuit 23 having an output terminal 42 for supplying a drive voltage VCP.

公开(公告)号：DE69222144T2

公开(公告)日：1998-02-05

申请号：DE69222144

申请日：1992-03-12

Applicant: ST MICROELECTRONICS SRL

Inventor： GARIBOLDI ROBERTO ,  LEONE MARCELLO

IPC: H02M1/08 ,  H03F3/26 ,  H03K17/06 ,  H03K17/687 ,  H02M3/18

Abstract: A drive circuit (20) comprising a voltage source (21) supplying a reference voltage (VREF) at its output (35); a voltage elevating circuit (23) connected to the supply (VS) and to the output (35) of the voltage source, and supplying at its output (42), under normal operating conditions, a drive voltage (VCP) greater than the supply voltage and increasing with the reference voltage. The input of the voltage source (21) is connected to the output (42) of the voltage elevating circuit (23), and defines a positive feedback resulting in an increase in the reference voltage (VREF) alongside an increase in the drive voltage (VCP), and therefore a corresponding increase in the drive voltage (VCP) up to a maximum permissible value, thus providing for a sufficient drive voltage for driving the gate-source junction of power MOS transistors, even in the presence of a low supply voltage.

公开(公告)号：DE69222144D1

公开(公告)日：1997-10-16

申请号：DE69222144

申请日：1992-03-12

Applicant: ST MICROELECTRONICS SRL

Inventor： GARIBOLDI ROBERTO ,  LEONE MARCELLO

IPC: H02M1/08 ,  H03F3/26 ,  H03K17/06 ,  H03K17/687 ,  H02M3/18

Abstract: A drive circuit (20) comprising a voltage source (21) supplying a reference voltage (VREF) at its output (35); a voltage elevating circuit (23) connected to the supply (VS) and to the output (35) of the voltage source, and supplying at its output (42), under normal operating conditions, a drive voltage (VCP) greater than the supply voltage and increasing with the reference voltage. The input of the voltage source (21) is connected to the output (42) of the voltage elevating circuit (23), and defines a positive feedback resulting in an increase in the reference voltage (VREF) alongside an increase in the drive voltage (VCP), and therefore a corresponding increase in the drive voltage (VCP) up to a maximum permissible value, thus providing for a sufficient drive voltage for driving the gate-source junction of power MOS transistors, even in the presence of a low supply voltage.