公开(公告)号：DE69839439D1

公开(公告)日：2008-06-19

申请号：DE69839439

申请日：1998-05-26

Applicant: ST MICROELECTRONICS SRL

Inventor： MAGRI' ANGELO ,  FRISINA FERRUCCIO

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/739

Abstract: High density MOS technology power device structure, comprising body regions (31A-31D) of a first conductivity type formed in a semiconductor layer (1) of a second conductivity type, characterized in that said body regions comprise at least one plurality of substantially rectilinear and substantially parallel body stripes (32) each joined at its ends to adjacent body stripes (32) by means of junction regions (33), so that said at least one plurality of body stripes (32) and said junction regions (33) form a continuous, serpentine-shaped body region (31A-31D).