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    METAL SEMICONDUCTOR OHMIC CONTACT POINT TYPE FORMATION PROCESSING METHOD
    1.
    发明专利
    METAL SEMICONDUCTOR OHMIC CONTACT POINT TYPE FORMATION PROCESSING METHOD 失效

    公开(公告)号：JPH04215424A

    公开(公告)日：1992-08-06

    申请号：JP4555091

    申请日：1991-02-20

    Applicant: ST MICROELECTRONICS SRL

    Inventor： SANTANGELO ANTONELLO ,  MAGRO CARMELO ,  FERLA GIUSEPPE ,  LANZA PAOLO

    IPC: H01L21/265 ,  H01L21/28 ,  H01L21/285 ,  H01L21/329 ,  H01L21/768

    Abstract: PURPOSE: To form the M-S contact of ohmic characteristic on a small doping region through dopant enrichment treatment on a contact surface by keeping the temperature and time of annealing treatment, which is to be performed after ion implantation on the surface of a semiconductor, at values without the possibility of changing functional characteristics in the structure of a device on the front surface of a wafer. CONSTITUTION: As a metal semiconductor ohmic contact forming treatment, the ion implantation of dopant is performed on the surface of a semiconductor 1. Next, a metal film 4 is deposited on the surface, where the ion implantation is performed, and then annealing treatment is performed considerably shorter than 60 minutes at a temperature considerably lower than 500 deg.C, so that dopant enrichment can be performed on the surface of the semiconductor 1 for forming the contact.

    METALLIZATION METHOD OF REAR OF SEMICONDUCTOR SUBSTRATE
    2.
    发明专利
    METALLIZATION METHOD OF REAR OF SEMICONDUCTOR SUBSTRATE 失效

    公开(公告)号：JPH04214671A

    公开(公告)日：1992-08-05

    申请号：JP4554991

    申请日：1991-02-20

    Applicant: ST MICROELECTRONICS SRL

    Inventor： SANTANGELO ANTONELLO ,  MAGRO CARMELO ,  LANZA PAOLO

    IPC: H01L21/28 ,  H01L21/285 ,  H01L29/47 ,  H01L29/872

    Abstract: PURPOSE: To provide a multilayer metallizing method for rear face of semiconductor substrate with which the concentration of dopant existing on the surface of a semiconductor is increased, at the same time temperature and duration of annealing treatment are maintained at values eliminating the need for changes in the other structural functions and functional characteristics of a semiconductor device and satisfactory M-S ohmic contact is provided. CONSTITUTION: The ion implantation step of dopant is performed on a surface 4 of the semiconductor substrate so as to non-crystalline and after this step, among series of metal layers, one layer 1 or more layers 1, 2... are deposited. Next, heating and annealing area performed considerably shorter than 60 minutes at a temperature considerably lower than 500 deg.C, under vacuum or an inert atmosphere.

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