公开(公告)号：JPH0342866A

公开(公告)日：1991-02-25

申请号：JP15412190

申请日：1990-06-14

Applicant: ST MICROELECTRONICS SRL

Inventor： ZAMBRANO RAFFAELE ,  MUSUMECI SALVATORE ,  RACITI SALVATORE

IPC: H01L21/8222 ,  H01L21/8248 ,  H01L27/06

Abstract: PURPOSE: To improve the dynamic characteristics of a power stage by using a bipolar mode field-effect transistor(BMFET), to maximize the current handling capacity and robustness of the power stage. CONSTITUTION: An n -type epitaxial layer 2 is grown on an n-type substrate 1 made of a high-impurity concn. single crystal Si, a p -type region is formed to constitute a lateral separation region of a component of an integrated control circuit, and n -type region 4 acting as a buried collector layer of a transistor of this control circuit. At this time a new epitaxial layer extending over the entire chip region is grown to form an n-type region 5. A p -type regions 6, 7 are formed with an n -type regions 10, 11, formed as a source of a BMFET and as a collector sink to reduce the series resistance of a low-voltage transistor. A base and emitter regions 12, 13 of an npn low-voltage transistor are formed, and contacts are formed to interconnect elements of a semiconductor device by metallizing and photomasking.

公开(公告)号：DE69031610T2

公开(公告)日：1998-03-12

申请号：DE69031610

申请日：1990-06-12

Applicant: ST MICROELECTRONICS SRL

Inventor： ZAMBRANO RAFFAELE ,  MUSUMECI SALVATORE ,  RACITI SALVATORE

IPC: H01L21/8222 ,  H01L21/8248 ,  H01L27/06 ,  H01L21/76 ,  H01L21/82

公开(公告)号：DE69031610D1

公开(公告)日：1997-11-27

申请号：DE69031610

申请日：1990-06-12

Applicant: ST MICROELECTRONICS SRL

Inventor： ZAMBRANO RAFFAELE ,  MUSUMECI SALVATORE ,  RACITI SALVATORE

IPC: H01L21/8222 ,  H01L21/8248 ,  H01L27/06 ,  H01L21/76 ,  H01L21/82