公开(公告)号：IT1317434B1

公开(公告)日：2003-07-09

申请号：ITMI20000941

申请日：2000-04-28

Applicant: ST MICROELECTRONICS SRL

Inventor： SAGGIO MARIO ,  RAINERI VITO ,  STAGNITTI UMBERTO ,  MUGAVERO SEBASTIANO

IPC: H05K20060101

Abstract: Electronic devices integrated monolithically in a semiconductor substrate (1) having a non-active area (ANA) contiguous with a device active area are fabricated by implanting ions of noble gas in the non-active area of the semiconductor substrate. The noble gas ions are then evaporated by thermal treatment to form getter microcavities (6) in the non-active area. An Independent claim is also included for the electronic device.

公开(公告)号：ITMI20000941A1

公开(公告)日：2001-10-29

申请号：ITMI20000941

申请日：2000-04-28

Applicant: ST MICROELECTRONICS SRL

Inventor： SAGGIO MARIO ,  RAINERI VITO ,  STAGNITTI UMBERTO ,  MUGAVERO SEBASTIANO

IPC: H05K20060101

公开(公告)号：ITMI20010339A1

公开(公告)日：2002-08-20

申请号：ITMI20010339

申请日：2001-02-20

Applicant: ST MICROELECTRONICS SRL

Inventor： SAGGIO MARIO ,  RAINERI VITO

IPC: H01L21/76 ,  H01L21/762

Abstract: A method for forming isolating structures in a silicon carbide layer (1,8) comprises the following steps: depositing a masking layer (2) onto the silicon carbide layer (1,8); and forming openings (2a) through said masking layer (2) to expose portions of the silicon carbide layer (1,8); and further comprises the steps of: ion implanting the whole chip surface; heat treating the entire surface of the silicon carbide layer (1,8) to form an oxide layer (4) having a first portion (5) with a first thickness in said at least one region (3), and having a second portion (6) with a second thickness at said silicon carbide layer (1,8).

公开(公告)号：ITMI20000941D0

公开(公告)日：2000-04-28

申请号：ITMI20000941

申请日：2000-04-28

Applicant: ST MICROELECTRONICS SRL

Inventor： SAGGIO MARIO ,  RAINERI VITO ,  STAGNITTI UMBERTO ,  MUGAVERO SEBASTIANO

IPC: H05K20060101