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    INFRARED DETECTOR DEVICE AND PROCESS FOR FORMING THE SAME
    1.
    发明专利
    INFRARED DETECTOR DEVICE AND PROCESS FOR FORMING THE SAME 失效

    公开(公告)号：JP2000164841A

    公开(公告)日：2000-06-16

    申请号：JP28993099

    申请日：1999-10-12

    Applicant: ST MICROELECTRONICS SRL

    Inventor： POLMAN ALBERT ,  HAMELIN NICHOLAS ,  KIK PETER ,  COFFA SALVATORE ,  FRISINA FERRUCCIO ,  SAGGIO MARIO

    IPC: H01L31/108 ,  G01J1/02 ,  G02B6/12 ,  H01L27/14 ,  H01L31/0352 ,  H01L31/103

    Abstract: PROBLEM TO BE SOLVED: To obtain an infrared detector device, exhibiting a high efficiency of transfer from infrared radiation to electrical currents by a semiconductor material. SOLUTION: An infrared detector device 1 is provided with P-N junctions 9 and 10, comprised of a first semiconductor material region 9 doped with rare-earth ions and a second semiconductor material region 10 of the oppositely doped type P. The detector device extends on a substrate 2, including a reflection layer 4 and is provided with a wave guide path 8 formed by protrusions whose range in horizontal direction is demarcated by an oxide a region for protection and containment. At least a part of the wave guide path 8 is formed of a P-N junction and has an end to which light to be detected is supplied. The detector device has electrodes 18 and 13, placed on the side and top of the wave guide path 8 and enables efficient collection of charge carriers produced by optical transfer.

    3.
    发明专利
    未知

    公开(公告)号：DE60016245D1

    公开(公告)日：2004-12-30

    申请号：DE60016245

    申请日：2000-09-01

    Applicant: ST MICROELECTRONICS SRL

    Inventor： COFFA SALVATORE ,  LIBERTINO SEBANIA ,  SAGGIO MARIO ,  FRISINA FERRUCCIO

    IPC: H01S3/16 ,  H01S5/30 ,  H01S5/32

    Abstract: The invention relates to a semiconductor device for electro-optic applications of the type including at least a rare-earth ions doped P/N junction integrated on a semiconductor substrate. This device may be used to obtain laser action in Silicon and comprises a cavity or a waveguide and a coherent light source obtained incorporating the rare-earth ions, and specifically Erbium ions, in the depletion layer of said P/N junction. The junction may be for instance the base-collector region of a bipolar transistor and is reverse biased.

    4.
    发明专利
    未知

    公开(公告)号：DE60325008D1

    公开(公告)日：2009-01-15

    申请号：DE60325008

    申请日：2003-12-16

    Applicant: ST MICROELECTRONICS SRL

    Inventor： SAGGIO MARIO ,  FRISINA FERRUCIO

    IPC: H01L27/06 ,  H01L21/336 ,  H01L29/06 ,  H01L29/78

    Abstract: An integrated device comprising a MOS transistor and a Schottky diode which are formed on a semiconductor substrate (1, 2; 1, 20) of a first conductivity type is shown. The device comprises a plurality of body region stripes (3) of a second conductivity type which are adjacent and parallel to each other, a first metal layer (12) placed over said substrate (1, 2; 1, 20) and a second metal layer placed under said substrate (1, 2; 1, 20). The device comprises a plurality of elementary structures (6, 7) parallel to each other each one of which comprises first zones provided with a silicon oxide layer (6) placed over a portion of the substrate which is comprised between two adjacent body region stripes (3), a polysilicon layer (7) superimposed to the silicon oxide layer (6), a dielectric layer (11) placed over and around the polysilicon layer (7). Some body region stripes (3) comprise source regions (10) of the first conductivity type which are placed adjacent to the first zones of the elementary structures (6, 7) to form elementary cells of said MOS transistor. The elementary structures (6, 7) and the body regions stripes (3) extend longitudinally in a transversal way to the formation of the channel in the elementary cells of the MOS transistor and the first metal layer (12) contacts the source regions (10). At least one elementary structure (6, 7) comprises at least a second zone (8) adapted to allow the direct contact between the first metal layer (12) and the underlying substrate portion (5) arranged between two adiacent body regions stripes (3) to perform the Schottky diode.

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