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    Phase change memory device for multi-bit storage device
    1.
    发明专利
    Phase change memory device for multi-bit storage device 有权
    用于多位存储器件的相变存储器件

    公开(公告)号：JP2009071314A

    公开(公告)日：2009-04-02

    申请号：JP2008261125

    申请日：2008-09-08

    Applicant: Politecnico Di Milano ,  St Microelectronics Srl ,  エッセティマイクロエレクトロニクス ソシエタ ア レスポンサビリタ リミタータ ,  ポリテクニコ ディ ミラノ

    Inventor： REDAELLI ANDREA ,  PELLIZZER FABIO ,  PIROVANO AGOSTINO

    IPC: H01L27/105 ,  H01L45/00

    CPC classification number: H01L45/1233 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144

    Abstract: PROBLEM TO BE SOLVED: To distinct different program states in an adequate time duration in multi-level programming.
    SOLUTION: A phase change memory device 10 includes a heater element (2) and a memory region (3) of a chalcogenic material. The memory region has a phase change portion (5) contacted electrically and thermally with the heater element so that a first current path is formed between the heater element and the remaining portion (4) of the memory element. The phase change portion (5) has capacity in correlation with information stored in the memory region and resistivity larger than that of the remaining portion (4). A parallel current path (11) extends between the heater element (2) and the remaining portion (4) of the memory element and has resistivity depending on the largeness of the phase change portion (5) and smaller than that of the phase change portion (5) so that the whole resistance of the phase change memory device is adjusted.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：在多级编程中以足够的持续时间来区分不同的程序状态。 解决方案：相变存储器件10包括加热元件（2）和硫属材料的存储区域（3）。 存储区域具有与加热器元件电和热接触的相变部分（5），使得在加热器元件和存储元件的剩余部分（4）之间形成第一电流路径。 相变部分（5）具有与存储在存储区域中的信息相关的能力，并且电阻率大于剩余部分（4）的容量。 平行电流路径（11）在加热器元件（2）和存储元件的剩余部分（4）之间延伸，并且具有取决于相变部分（5）的大小的电阻率并且小于相变部分 （5），从而调整相变存储器件的整体电阻。 版权所有（C）2009，JPO＆INPIT

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