公开(公告)号：JP2000137999A

公开(公告)日：2000-05-16

申请号：JP30499899

申请日：1999-10-27

Applicant: ST MICROELECTRONICS SRL

Inventor： RIVA MARCO ,  ROLANDI PAOLO ,  MONTANARO MASSIMO

IPC: G06F12/16 ,  G11C11/56 ,  G11C16/02 ,  G11C29/12 ,  G11C29/50 ,  G11C29/00

Abstract: PROBLEM TO BE SOLVED: To replace a damaged cell by reading each memory cell constituting a storage device, comparing each memory cell with at least one reference memory cell at one time, determining whether the threshold of the memory cell is smaller than that of at least one reference memory cell, and determining the number of memory cells each having threshold larger than that of at least one reference cell. SOLUTION: A memory cell 10 checks a barging state, and a column multiplexer 11 selects a memory cell 10 belonging to a memory matrix allocated line. Reference memory cells 12:12a to 12f respectively have gradually increasing thresholds, and indicate reference memory cells connected to corresponding sense amplifying means 15. The output of each of the sense amplifying means 15 is connected to an encoder means 16, and the encoder means 16 is adapted to encode a result before the number of memory cells having thresholds exceeding those of the reference memory cells is counted.

公开(公告)号：ITMI20001729A1

公开(公告)日：2002-01-28

申请号：ITMI20001729

申请日：2000-07-27

Applicant: ST MICROELECTRONICS SRL

Inventor： RIVA MARCO

IPC: H03K17/16

公开(公告)号：ITMI20001729D0

公开(公告)日：2000-07-27

申请号：ITMI20001729

申请日：2000-07-27

Applicant: ST MICROELECTRONICS SRL

Inventor： RIVA MARCO

IPC: H03K17/16

Abstract: A decoupling circuit for decoupling conduction lines from each other, the circuit including at least one pass gate element having conduction terminals connected to the conduction lines and having at least one control terminal. The decoupling circuit includes at least one protection circuit inserted between the control terminal and at least one of the conduction lines, and including at least one protection transistor connected to the control terminal and to the at least one conduction line, and configured to take in a disturbing signal passing through the pass gate element (N1) to properly decouple the conduction lines from each other on the occurrence of a disturbing condition.

公开(公告)号：DE69831155D1

公开(公告)日：2005-09-15

申请号：DE69831155

申请日：1998-10-29

Applicant: ST MICROELECTRONICS SRL

Inventor： RIVA MARCO ,  ROLANDI PAOLO ,  MONTANARO MASSIMO

IPC: G06F12/16 ,  G11C11/56 ,  G11C16/02 ,  G11C29/12 ,  G11C29/50 ,  G11C29/00 ,  G06F11/20

Abstract: A method for testing virgin memory cells in a multilevel memory device which comprises a plurality of memory cells, the particularity of which consists of the fact that it comprises the steps of: reading the individual memory cells that constitute a memory device and comparing each one of these memory cells with at least one reference memory cell at a time, so as to determine whether the threshold of the memory cells is lower than the threshold of the at least one reference memory cell or not; determining the number of the memory cells whose threshold is higher than the threshold of the at least one reference cell; the at least one reference memory cell being chosen with a gradually higher threshold; when the number of memory cells whose threshold is higher than a given reference threshold is found to be sufficiently lower than the number of redundancy memory cells provided in the memory device, assuming the given reference threshold as lower reference threshold for the memory device, determining a statistical distribution of the thresholds of the memory cells.

公开(公告)号：IT1318266B1

公开(公告)日：2003-07-28

申请号：ITMI20001729

申请日：2000-07-27

Applicant: ST MICROELECTRONICS SRL

Inventor： RIVA MARCO

IPC: H03K17/16

Abstract: A decoupling circuit for decoupling conduction lines from each other, the circuit including at least one pass gate element having conduction terminals connected to the conduction lines and having at least one control terminal. The decoupling circuit includes at least one protection circuit inserted between the control terminal and at least one of the conduction lines, and including at least one protection transistor connected to the control terminal and to the at least one conduction line, and configured to take in a disturbing signal passing through the pass gate element (N1) to properly decouple the conduction lines from each other on the occurrence of a disturbing condition.