公开(公告)号：ITTO20010537A1

公开(公告)日：2002-12-05

申请号：ITTO20010537

申请日：2001-06-05

Applicant: ST MICROELECTRONICS SRL

Inventor： FONTANA MARCO ,  PAGLIATO MAURO ,  ROLANDO PAOLO ,  ODDONE GIORGIO

IPC: H02M3/07

Abstract: The voltage applied to the gate terminals of the charging transistors and charge-transfer transistors of two parallel pumping branches forming a charge pump is a boosted voltage generated internally and supplied in a crosswise manner. In particular, for driving the charge pump, first and second driving signals are generated respectively for the first and for the second pumping branch via a first and respectively a second driving circuit; the first and second driving signals are also supplied respectively to a first and to a second auxiliary charge pump to obtain respectively first and second voltage-boosted signals; and the first and second boosted voltages are respectively supplied to the second and to the first driving circuit.

公开(公告)号：ITTO20010537D0

公开(公告)日：2001-06-05

申请号：ITTO20010537

申请日：2001-06-05

Applicant: ST MICROELECTRONICS SRL

Inventor： FONTANA MARCO ,  PAGLIATO MAURO ,  ROLANDO PAOLO ,  ODDONE GIORGIO

IPC: H02M3/07

Abstract: The voltage applied to the gate terminals of the charging transistors and charge-transfer transistors of two parallel pumping branches forming a charge pump is a boosted voltage generated internally and supplied in a crosswise manner. In particular, for driving the charge pump, first and second driving signals are generated respectively for the first and for the second pumping branch via a first and respectively a second driving circuit; the first and second driving signals are also supplied respectively to a first and to a second auxiliary charge pump to obtain respectively first and second voltage-boosted signals; and the first and second boosted voltages are respectively supplied to the second and to the first driving circuit.