1.
    发明专利
    未知

    公开(公告)号:DE602004008240T2

    公开(公告)日:2008-05-15

    申请号:DE602004008240

    申请日:2004-06-14

    Abstract: A method for managing bad memory blocks of a nonvolatile-memory device, in which the available memory blocks are divided into a first set, formed by addressable memory blocks that are to be used by a user, and a second set, formed by spare memory blocks that are to replace bad addressable memory blocks, and in which the bad addressable memory blocks are re-mapped into corresponding spare memory blocks. The re-mapping of the bad addressable memory blocks envisages: seeking bad spare memory blocks; storing the logic address of each bad spare memory block in a re-directing vector in a position corresponding to that of the bad spare memory block in the respective set; seeking bad addressable memory blocks; storing the logic address of each bad addressable memory block in a free position in the re-directing vector; and re-mapping the bad addressable memory block into a spare memory block having a position corresponding to that of the address of the bad addressable memory block in the re-directing vector.

    2.
    发明专利
    未知

    公开(公告)号:DE602004008240D1

    公开(公告)日:2007-09-27

    申请号:DE602004008240

    申请日:2004-06-14

    Abstract: A method for managing bad memory blocks of a nonvolatile-memory device, in which the available memory blocks are divided into a first set, formed by addressable memory blocks that are to be used by a user, and a second set, formed by spare memory blocks that are to replace bad addressable memory blocks, and in which the bad addressable memory blocks are re-mapped into corresponding spare memory blocks. The re-mapping of the bad addressable memory blocks envisages: seeking bad spare memory blocks; storing the logic address of each bad spare memory block in a re-directing vector in a position corresponding to that of the bad spare memory block in the respective set; seeking bad addressable memory blocks; storing the logic address of each bad addressable memory block in a free position in the re-directing vector; and re-mapping the bad addressable memory block into a spare memory block having a position corresponding to that of the address of the bad addressable memory block in the re-directing vector.

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