公开(公告)号：DE602004008240T2

公开(公告)日：2008-05-15

申请号：DE602004008240

申请日：2004-06-14

Applicant: ST MICROELECTRONICS SRL

Inventor： IACULO MASSIMO ,  GUIDA NICOLA ,  RUGGIERO ANDREA

IPC: G11C29/00 ,  G06F12/12

Abstract: A method for managing bad memory blocks of a nonvolatile-memory device, in which the available memory blocks are divided into a first set, formed by addressable memory blocks that are to be used by a user, and a second set, formed by spare memory blocks that are to replace bad addressable memory blocks, and in which the bad addressable memory blocks are re-mapped into corresponding spare memory blocks. The re-mapping of the bad addressable memory blocks envisages: seeking bad spare memory blocks; storing the logic address of each bad spare memory block in a re-directing vector in a position corresponding to that of the bad spare memory block in the respective set; seeking bad addressable memory blocks; storing the logic address of each bad addressable memory block in a free position in the re-directing vector; and re-mapping the bad addressable memory block into a spare memory block having a position corresponding to that of the address of the bad addressable memory block in the re-directing vector.

公开(公告)号：ITMI20031126A1

公开(公告)日：2004-12-06

申请号：ITMI20031126

申请日：2003-06-05

Applicant: ST MICROELECTRONICS SRL

Inventor： BAGGI PIETRO ,  DELLAMONICA ANGELO ,  GHEZZI STEFANO ,  GUIDA NICOLA ,  IACULO MASSIMO ,  POLLIO ANTONINO

IPC: G06F12/02 ,  G06F12/08 ,  G06K20060101

公开(公告)号：DE602004008240D1

公开(公告)日：2007-09-27

申请号：DE602004008240

申请日：2004-06-14

Applicant: ST MICROELECTRONICS SRL

Inventor： IACULO MASSIMO ,  GUIDA NICOLA ,  RUGGIERO ANDREA

IPC: G11C29/00 ,  G06F12/12

Abstract: A method for managing bad memory blocks of a nonvolatile-memory device, in which the available memory blocks are divided into a first set, formed by addressable memory blocks that are to be used by a user, and a second set, formed by spare memory blocks that are to replace bad addressable memory blocks, and in which the bad addressable memory blocks are re-mapped into corresponding spare memory blocks. The re-mapping of the bad addressable memory blocks envisages: seeking bad spare memory blocks; storing the logic address of each bad spare memory block in a re-directing vector in a position corresponding to that of the bad spare memory block in the respective set; seeking bad addressable memory blocks; storing the logic address of each bad addressable memory block in a free position in the re-directing vector; and re-mapping the bad addressable memory block into a spare memory block having a position corresponding to that of the address of the bad addressable memory block in the re-directing vector.

公开(公告)号：ITMI20031126D0

公开(公告)日：2003-06-05

申请号：ITMI20031126

申请日：2003-06-05

Applicant: ST MICROELECTRONICS SRL

Inventor： GHEZZI STEFANO ,  IACULO MASSIMO ,  GUIDA NICOLA ,  POLLIO ANTONINO ,  DELLAMONICA ANGELO ,  BAGGI PIETRO

IPC: G06F12/02 ,  G06F12/08

Abstract: The mass memory device includes a flash memory (205) having a plurality of physical sectors, suitable to be erased individually, each one including a plurality of physical blocks and a method for emulating a random-access logical memory space having a plurality of logical sectors each one including a plurality of logical blocks, the logical sectors being grouped into at least one group. The method includes partitioning a random-access logical memory space into a plurality of logical sectors each one including a plurality of logical blocks, the logical sectors being grouped into at least one group of logical sectors; associating a corresponding data physical sector with each of the logical sectors and associating a plurality of corresponding buffer physical sectors with each group of logical sectors; setting at least one of the buffer physical sectors as an active buffer physical sector; writing each of the logical blocks into one of an available physical block of the corresponding data physical sector if the corresponding data physical sector is not full; and the corresponding active buffer physical sector if the corresponding data physical sector is full; setting another buffer physical sector as active, in response to the active buffer physical sector becoming full; and defragging each data physical sector which is full and associated with a logical sector having at least one logical block stored in the corresponding buffer physical sector which is full.