公开(公告)号：JPH07336998A

公开(公告)日：1995-12-22

申请号：JP15839195

申请日：1995-05-31

Applicant: ST MICROELECTRONICS SRL

Inventor： ROSSI DOMENICO ,  TAHARA HISASHI

IPC: H01L27/04 ,  H01L21/822 ,  H01L29/78 ,  H01L29/92 ,  H02M3/07

Abstract: PURPOSE: To obtain an output voltage that is close that double that of an input voltage by providing a bipolar part for securing switching, even at a low input voltage and a CMOS part for reducing a voltage drop through the bipolar element. CONSTITUTION: A first field effect transistor M1 is connected in parallel with a bipolar transistor T3 for constituting a switch that is directed toward the ground of a charge transfer capacitor C1, and a second field effect transistor M2 is connected in parallel with a charging diode T7 of an output capacitor C2. Then, a pair of CMOSs are driven by a clock signal CK, that passes through a level-shift bipolar transistor T2 where a power is supplied by a voltage, that exists at an output node VOUT of a charge pump circuit and a succeeding inversion stage I2.

公开(公告)号：DE69422164D1

公开(公告)日：2000-01-20

申请号：DE69422164

申请日：1994-05-31

Applicant: ST MICROELECTRONICS SRL

Inventor： ROSSI DOMENICO ,  TAHARA HISASHI

IPC: H01L27/04 ,  H01L21/822 ,  H01L29/78 ,  H01L29/92 ,  H02M3/07

Abstract: A BiCMOS capacitive charge pump circuit for low supply voltage has a bipolar part, functionally reproducing a basic charge pump circuit and a CMOS part that comprises MOS transistors (M1, M2) functionally connected in parallel with the driving switch toward ground potential (T3) of the charge transfer capacitance (C1) and in parallel with the output diode (T7) for substantially nullifying voltage drops on the respective bipolar components (T3, T7). A special driving circuit (T8, R2, I2), powered at the boosted output voltage (VOUT) responds to the rise of the voltage on the output node above a minimum level, as ensured by the bipolar part of the charge pump circuit, to drive said MOS transistors (M1, M2), thus allowing the output voltage to reach a level that is substantially double the supply voltage (Vs), also when the latter is exceptionally low for reliably ensuring switching of the CMOS part of the circuit.

公开(公告)号：DE69422164T2

公开(公告)日：2000-04-20

申请号：DE69422164

申请日：1994-05-31

Applicant: ST MICROELECTRONICS SRL

Inventor： ROSSI DOMENICO ,  TAHARA HISASHI

IPC: H01L27/04 ,  H01L21/822 ,  H01L29/78 ,  H01L29/92 ,  H02M3/07

Abstract: A BiCMOS capacitive charge pump circuit for low supply voltage has a bipolar part, functionally reproducing a basic charge pump circuit and a CMOS part that comprises MOS transistors (M1, M2) functionally connected in parallel with the driving switch toward ground potential (T3) of the charge transfer capacitance (C1) and in parallel with the output diode (T7) for substantially nullifying voltage drops on the respective bipolar components (T3, T7). A special driving circuit (T8, R2, I2), powered at the boosted output voltage (VOUT) responds to the rise of the voltage on the output node above a minimum level, as ensured by the bipolar part of the charge pump circuit, to drive said MOS transistors (M1, M2), thus allowing the output voltage to reach a level that is substantially double the supply voltage (Vs), also when the latter is exceptionally low for reliably ensuring switching of the CMOS part of the circuit.