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12 records (took 0.022 seconds)

    1.
    发明专利
    未知

    公开(公告)号：ITMI990920A1

    公开(公告)日：2000-10-30

    申请号：ITMI990920

    申请日：1999-04-30

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VASSALLI OMAR

    IPC: G03F7/42

    Abstract: Presented is a method of enhancing the rate of removal of a photoresist layer from wafers of semiconductor material after the latter have gone through various process steps to define the patterns of integrated circuits. The method includes heating the wafer and treating it with low-pressure steam in a vacuum environment before starting to remove the photoresist by plasma or wet solutions. This pre-treatment of the photoresists allows the time for removing the photoresist to be reduced substantially and eliminates problems from residue.

    6.
    发明专利
    未知

    公开(公告)号：IT1312270B1

    公开(公告)日：2002-04-10

    申请号：ITMI990920

    申请日：1999-04-30

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VASSALLI OMAR

    IPC: G03F7/42

    Abstract: Presented is a method of enhancing the rate of removal of a photoresist layer from wafers of semiconductor material after the latter have gone through various process steps to define the patterns of integrated circuits. The method includes heating the wafer and treating it with low-pressure steam in a vacuum environment before starting to remove the photoresist by plasma or wet solutions. This pre-treatment of the photoresists allows the time for removing the photoresist to be reduced substantially and eliminates problems from residue.

    10.
    发明专利
    未知

    公开(公告)号：ITTO20001134A1

    公开(公告)日：2002-06-05

    申请号：ITTO20001134

    申请日：2000-12-05

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VASSALLI OMAR ,  GULLOTTA MASSIMILIANO

    IPC: H01L21/3105 ,  H01L21/768

    Abstract: A process that includes forming a metal layer on top of a wafer of semiconductor material; forming a mask having an appropriate geometry; defining the metal layer to form conductive lines in the metal layer according to the geometry of the mask; forming, on side walls of the mask a polymeric structure; selectively removing the mask; depositing, on the polymeric structure and on the conductive lines, an insulating material. The polymeric structure, made of an inorganic polymer, forms a "supporting bridge" for the insulating material, preventing the latter from depositing in the gaps between the conductive lines. In these conditions, the gap between two adjacent conductive lines is occupied only by air, which has a very low dielectric constant. This results in a reduced capacitive coupling between the lines themselves.

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