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    2.
    发明专利
    未知

    公开(公告)号：DE602004017958D1

    公开(公告)日：2009-01-08

    申请号：DE602004017958

    申请日：2004-04-01

    Applicant: ST MICROELECTRONICS SRL

    Inventor： ALBA SIMONE ,  ROMEO CARMELO

    IPC: G03F1/20 ,  G03F7/00 ,  H01L21/302

    Abstract: A method of successfully defining (nanometric) geometries for plasma and/or ion implantation treatments of a semiconductor wafer has been found that is decisively more cost effective than the previously known approaches.A reusable laminar mask of a material that is mechanically selfsustaining, lithographically definable and dry etchable is fabricated by lithographically defining on a mechanically selfsustaining laminar substrate of a dry etchable material the desired geometries and subsequently dry etching it to produce the desired apertures through the whole thickness of the substrate. After removing the resist mask used for lithographically defining and etching the apertures through the laminar substrate, a layer of a refractory material having a substantial resistance to plasmas is deposited over the surface of the defined and etched laminar substrate that will eventually face toward the plasma or the ion source.The so fabricated mask (or mask electrode) is placed in contact or at a relatively small distance that may be comprised between 1 and 5 millimeters, from the surface of an ordinarily supported wafer to be processed and if the mask is held spaced from the surface of the wafer it is preferably coupled to an RF power source.Most preferably, the laminar substrate should be electrically conductive because, according to preferred embodiments of this invention, the reusable mask is fed with RF power during use.It has been found that it is possible to achieve an outstandingly higher productivity and a decisive cost abatement by avoiding the need of lithographically defining the required geometries on the semiconductor wafer as well as of defining the geometries by direct writing on a resist layer with a focused electron beam (electron brush).

    4.
    发明专利
    未知

    公开(公告)号：DE69620199D1

    公开(公告)日：2002-05-02

    申请号：DE69620199

    申请日：1996-12-16

    Applicant: ST MICROELECTRONICS SRL

    Inventor： GHIO EMILIO ,  ALBA SIMONE ,  COLOGNESE ANDREA

    IPC: H01L21/28 ,  H01L21/336 ,  H01L21/8247

    Abstract: The process described requires the formation of floating-gate non-volatile memory cells entirely similar in structure to those produced by known processes, and comprises an annealing treatment at relatively low temperature (430 DEG C) to repair damage due to plasma treatments. To obtain threshold voltage values for the cells close to the theoretical values, especially for cells with particularly extended interconnections, the cells are subjected to ultraviolet radiation before the annealing treatment, in order to neutralize any electrical charges present in the floating-gate electrodes of the cells.

    6.
    发明专利
    未知

    公开(公告)号：DE69627672D1

    公开(公告)日：2003-05-28

    申请号：DE69627672

    申请日：1996-12-16

    Applicant: ST MICROELECTRONICS SRL

    Inventor： GHIO EMILIO ,  ALBA SIMONE ,  COLOGNESE ANDREA ,  MAUGAIN FRANCOIS ,  RIVERA GIOVANNI

    IPC: H01L21/66 ,  H01L29/00

    Abstract: The method described provides for the following operations: forming cells of EEPROM type on a wafer with source (S), drain (D) and control gate (G) surface terminals (pads), subjecting the cells to UV radiation so as to erase them thereby fixing a reference threshold voltage, applying programming voltages of preset value to one of the cells and measuring the corresponding threshold voltages, subjecting this cell to UV radiation so as to restore its threshold to the reference value, subjecting the wafer to the plasma treatment to be assessed, measuring the threshold voltages of the cells and comparing them with the reference threshold voltage so as to derive from the comparison information on the alterations induced on the dielectrics formed on the wafer and on the distribution of the plasma potential. The method guarantees high sensitivity of measurement, great reliability and reproducibility of the measurements and can be used with advantage both in the design of equipment for plasma treatments and in the fabrication of semiconductor devices in order to increase production yield.

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