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    MINUTE CONTACT AREA IN SEMICONDUCTOR DEVICE, HIGH PERFORMANCE PHASE CHANGE MEMORY CELL AND METHOD OF MANUFACTURING THE MEMORY CELL
    1.
    发明专利
    MINUTE CONTACT AREA IN SEMICONDUCTOR DEVICE, HIGH PERFORMANCE PHASE CHANGE MEMORY CELL AND METHOD OF MANUFACTURING THE MEMORY CELL 有权

    公开(公告)号：JP2003174144A

    公开(公告)日：2003-06-20

    申请号：JP2002353352

    申请日：2002-12-05

    Applicant: ST MICROELECTRONICS SRL ,  OVONYX INC

    Inventor： BEZ ROBERTO ,  PELLIZZER FABIO ,  RIVA CATERINA ,  ZONCA ROMINA

    IPC: H01L27/10 ,  G11C16/02 ,  H01L27/105 ,  H01L27/24 ,  H01L45/00

    Abstract: PROBLEM TO BE SOLVED: To provide a high performance phase change memory cell of the minute contact structure. SOLUTION: The contact structure comprises a first conductive area having a first thin film portion of a first sublithographic size in a first direction, and a second conductive area having a second thin film portion of a second sublithographic size in a second direction crossing the first direction. The first and second thin film portions are electrically in contact with each other to form a contact surface including the sublithographic extending area. The thin film portions are formed with a deposition method in place of the lithography method. The first thin film portion is deposited to the wall of an aperture within a first dielectric material layer. The second thin film portion may be formed by depositing a sacrifice area to the perpendicular wall of a first limit layer, depositing a second limit layer to the side surface where the sacrifice area is not deposited, removing thereafter the sacrifice area, forming a sublithographic aperture for etching the mold aperture in the mold layer, and then filling the mold aperture. COPYRIGHT: (C)2003,JPO

    5.
    发明专利
    未知

    公开(公告)号：DE60311641D1

    公开(公告)日：2007-03-22

    申请号：DE60311641

    申请日：2003-05-26

    Applicant: ST MICROELECTRONICS SRL ,  OVONYX INC

    Inventor： ZONCA ROMINA

    IPC: H01L21/768 ,  H01L45/00

    Abstract: Preparation of a film of a complex of titanium, silicon and nitrogen (TiSiN) involves: (a) depositing a TiN (titanium nitrogen) film; and (b) exposing a film of a complex of titanium and nitrogen (TiN) to a silicon releasing gas without previously exposing the film to a carbon reducing treatment.

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