公开(公告)号：EP1909320A1

公开(公告)日：2008-04-09

申请号：EP06301019.3

申请日：2006-10-05

Applicant: ST Microelectronics Crolles 2 SAS

Inventor： Jourdan, Nicolas ,  Torres, Joaquin

IPC: H01L21/768

CPC classification number: H01L21/76843 ,  H01L21/76831 ,  H01L21/76864 ,  H01L21/76868 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention concerns a method of forming a copper portion surrounded by an insulating material (14) in an integrated circuit structure (2), the insulating material being a first oxide, the method having steps including forming a composite material (24) over a region of the insulating material where the copper portion is to be formed, the composite material formed of first and second materials, the first material for forming a copper seed repair layer (28), and annealing such that the second material reacts with the insulating material to form a second oxide (26), the second oxide forming a diffusion barrier to copper (32).

Abstract translation: 本发明涉及一种形成由集成电路结构（2）中的绝缘材料（14）围绕的铜部分的方法，所述绝缘材料是第一氧化物，所述方法具有以下步骤：在区域上形成复合材料（24） 要形成铜部分的绝缘材料，由第一和第二材料形成的复合材料，用于形成铜种子修复层（28）的第一材料和退火，使得第二材料与绝缘材料反应 形成第二氧化物（26），所述第二氧化物形成对铜（32）的扩散阻挡层。