公开(公告)号：EP1744359A1

公开(公告)日：2007-01-17

申请号：EP06291019.5

申请日：2006-06-21

Applicant: ST Microelectronics Crolles 2 SAS ,  Koninklijke Philips Electronics N.V.

Inventor： Torres, Joaquin ,  Gosset, Laurent-Georges

IPC: H01L21/768

CPC classification number: H01L23/5222 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76849 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides an improved integrated circuit and integrated circuit fabrication method to introduce highly controlled air cavities within high-speed copper interconnects based on the introduction of a polymer material on the walls of the interconnect lines and vias within the interconnect stack, which incorporates and controls air cavities formation, thus enhancing the signal propagation performances of the semiconductor interconnects.

Abstract translation: 本发明提供了一种改进的集成电路和集成电路制造方法，其基于在互连线的壁上引入聚合物材料和互连叠层内的通孔，将高度控制的空气腔引入高速铜互连中， 控制空气腔形成，从而提高半导体互连的信号传播性能。

公开(公告)号：EP1909320A1

公开(公告)日：2008-04-09

申请号：EP06301019.3

申请日：2006-10-05

Applicant: ST Microelectronics Crolles 2 SAS

Inventor： Jourdan, Nicolas ,  Torres, Joaquin

IPC: H01L21/768

CPC classification number: H01L21/76843 ,  H01L21/76831 ,  H01L21/76864 ,  H01L21/76868 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention concerns a method of forming a copper portion surrounded by an insulating material (14) in an integrated circuit structure (2), the insulating material being a first oxide, the method having steps including forming a composite material (24) over a region of the insulating material where the copper portion is to be formed, the composite material formed of first and second materials, the first material for forming a copper seed repair layer (28), and annealing such that the second material reacts with the insulating material to form a second oxide (26), the second oxide forming a diffusion barrier to copper (32).

Abstract translation: 本发明涉及一种形成由集成电路结构（2）中的绝缘材料（14）围绕的铜部分的方法，所述绝缘材料是第一氧化物，所述方法具有以下步骤：在区域上形成复合材料（24） 要形成铜部分的绝缘材料，由第一和第二材料形成的复合材料，用于形成铜种子修复层（28）的第一材料和退火，使得第二材料与绝缘材料反应 形成第二氧化物（26），所述第二氧化物形成对铜（32）的扩散阻挡层。