公开(公告)号：WO0132554A3

公开(公告)日：2001-11-01

申请号：PCT/US0041815

申请日：2000-11-02

Applicant: STANDARD MEMS INC

Inventor： FRICANO GLENN J ,  LIZZA MARK ,  PUMO THOMAS A ,  TRIMMER WILLIAM S

IPC: B81B1/00 ,  B81C1/00

CPC classification number: B81C1/00119 ,  B81B2201/055 ,  B81B2203/0353 ,  B81C1/00595 ,  B81C2201/0173

Abstract: A method for forming microscopic scale structures by selective etching of a doped substrate is disclosed. A substrate is prepared for etching by forming relatively deep doped substrate regions with substantially faster dissolution rates in selected etchants than the surrounding pure substrate. The doped regions are defined by depositing the dopants on the substrate using a lithographic process. Doped regions with high aspect ratios are produced by thermomigrating the deposited metal into the substrate. The substrate is then etched in an etchant that selectively removes the doped regions, while leaving the surrounding pure substrate essentially unetched. Thus, the doped region can be used to define a high aspect ratio feature, such as a microtubulc or micro-channel. Additionally, methods for forming more complex structures by depositing a variety of different dopants in a pattern on a substrate are disclosed. Combinations of the foregoing selective doping methods with a mask-and-etch process are further disclosed, useful for making structures such as a microscopic needle having a central microtubule for injecting fluids.

Abstract translation: 公开了一种通过选择性蚀刻掺杂衬底形成微观尺度结构的方法。 通过在选择的蚀刻剂中形成比周围的纯基底具有明显更快的溶解速率的相对深的掺杂基底区域来准备用于蚀刻的基底以进行蚀刻。 通过使用光刻工艺将掺杂剂沉积在衬底上来限定掺杂区域。 具有高纵横比的掺杂区域通过将沉积的金属热沉积到衬底中而产生。 然后在选择性去除掺杂区域的蚀刻剂中蚀刻衬底，同时使周围的纯衬底基本上未被蚀刻。 因此，掺杂区域可以用于定义高纵横比特征，例如微管或微通道。 另外，公开了通过在衬底上以图案沉积多种不同掺杂剂来形成更复杂结构的方法。 进一步公开了前述选择性掺杂方法与掩模 - 蚀刻工艺的组合，其可用于制造诸如具有用于注射流体的中央微管的微观针的结构。

公开(公告)号：AU2921201A

公开(公告)日：2001-05-14

申请号：AU2921201

申请日：2000-11-02

Applicant: STANDARD MEMS INC

Inventor： FRICANO GLENN J ,  LIZZA MARK ,  PUMO THOMAS A ,  TRIMMER WILLIAM S

IPC: B81B1/00 ,  B81C1/00