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    Process for producing spatially patterned components
    3.
    发明授权
    Process for producing spatially patterned components 失效
    用于生产空间图案化部件的方法

    公开(公告)号：US5902120A

    公开(公告)日：1999-05-11

    申请号：US41805

    申请日：1998-03-13

    Applicant: Guenter Igel ,  Martin Mall

    Inventor： Guenter Igel ,  Martin Mall

    IPC: H01L23/34 ,  B81C1/00 ,  H01L23/36 ,  H01L21/302

    CPC classification number: B81C1/00666 ,  B81B2203/0136 ,  B81C2201/0136 ,  B81C2201/0173

    Abstract: A process is disclosed for producing spatially patterned components from a body. On the backside of the body, a retardation layer with openings is provided for retarding a removal of the material of the body, and areas of migration-capable material are deposited. The body is subjected to a thermal migration process to form migration regions. Then, in a single material removal step, the components are separated from the body and the migration regions are exposed.

    Abstract translation: 公开了用于从身体产生空间图案化部件的方法。 在身体的背面，提供具有开口的延迟层，用于延缓身体材料的去除，并沉积可迁移材料的区域。 对身体进行热迁移过程以形成迁移区域。 然后，在单个材料去除步骤中，将组分与身体分离并且暴露出迁移区域。

    静電駆動型ＭＥＭＳ素子とその製造方法、光学ＭＥＭＳ素子、光変調素子、ＧＬＶデバイス、及びレーザディスプレイ
    8.
    发明申请
    静電駆動型ＭＥＭＳ素子とその製造方法、光学ＭＥＭＳ素子、光変調素子、ＧＬＶデバイス、及びレーザディスプレイ 审中-公开
    静电驱动MEMS元件，其制造方法，光学MEMS元件，光学调制元件，GLV器件和激光显示器

    公开(公告)号：WO2003055788A1

    公开(公告)日：2003-07-10

    申请号：PCT/JP2002/013127

    申请日：2002-12-16

    Applicant: ソニー株式会社 ,  池田 浩一

    Inventor： 池田 浩一

    IPC: B81B3/00

    CPC classification number: B81C1/0015 ,  B81B2201/045 ,  B81B2203/04 ,  B81C2201/0109 ,  B81C2201/0173 ,  B81C2203/0109 ,  G02B26/0841

    Abstract: An electrostatic MEMS element for flattening a drive side electrode surface and improving its performance as well as for improving degree of design freedom in a manufacturing process. A manufacturing method of the electrostatic MEMS element is also disclosed. Moreover, a GLV device using the MEMS element and a laser display using the GLV device are also disclosed. The electrostatic MEMS element includes a substrate side electrode and a beam having a drive side electrode driven by an electrostatic attracting force or electrostatic repulsive force functioning between the substrate side electrode and the drive side electrode. The substrate side electrode is formed in a conductive semiconductor region having impurities in the semiconductor substrate so as to constitute an electrostatic drive MEMS element.

    Abstract translation: 一种静电MEMS元件，用于使驱动侧电极表面平坦化并提高其性能，并提高制造过程中的设计自由度。 还公开了静电MEMS元件的制造方法。 此外，还公开了使用MEMS元件的GLV器件和使用GLV器件的激光显示器。 静电MEMS元件包括基板侧电极和具有通过在基板侧电极和驱动侧电极之间起作用的静电吸引力或静电排斥力驱动的驱动侧电极的光束。 衬底侧电极形成在半导体衬底中具有杂质的导电半导体区域中，以构成静电驱动MEMS元件。

    MICROSCOPIC SCALE FORMING METHOD BY SELECTIVE ETCHING OF A DOPED SUBSTRATE
    9.
    发明申请
    MICROSCOPIC SCALE FORMING METHOD BY SELECTIVE ETCHING OF A DOPED SUBSTRATE 审中-公开
    通过选择性蚀刻DOPED基板的微观尺度形成方法

    公开(公告)号：WO01032554A2

    公开(公告)日：2001-05-10

    申请号：PCT/US2000/041815

    申请日：2000-11-02

    IPC: B81B1/00 ,  B81C1/00 ,  B81C

    CPC classification number: B81C1/00119 ,  B81B2201/055 ,  B81B2203/0353 ,  B81C1/00595 ,  B81C2201/0173

    Abstract: A method for forming microscopic scale structures by selective etching of a doped substrate is disclosed. A substrate is prepared for etching by forming relatively deep doped substrate regions with substantially faster dissolution rates in selected etchants than the surrounding pure substrate. The doped regions are defined by depositing the dopants on the substrate using a lithographic process. Doped regions with high aspect ratios are produced by thermomigrating the deposited metal into the substrate. The substrate is then etched in an etchant that selectively removes the doped regions, while leaving the surrounding pure substrate essentially unetched. Thus, the doped region can be used to define a high aspect ratio feature, such as a microtubulc or micro-channel. Additionally, methods for forming more complex structures by depositing a variety of different dopants in a pattern on a substrate are disclosed. Combinations of the foregoing selective doping methods with a mask-and-etch process are further disclosed, useful for making structures such as a microscopic needle having a central microtubule for injecting fluids.

    Abstract translation: 公开了通过选择性蚀刻掺杂衬底来形成微观尺度结构的方法。 通过在选定的蚀刻剂中形成比周围的纯底物基本上更快的溶解速率，形成相对较深的掺杂衬底区域，制备衬底用于蚀刻。 通过使用光刻工艺将掺杂剂沉积在衬底上来限定掺杂区域。 通过将沉积的金属热转移到基底中来产生具有高纵横比的掺杂区域。 然后在选择性地去除掺杂区域的蚀刻剂中蚀刻衬底，同时使周围的纯衬底基本上未被蚀刻。 因此，掺杂区域可用于限定高纵横比特征，例如微管或微通道。 另外，公开了通过在衬底上以图案沉积各种不同掺杂剂形成更复杂结构的方法。 还公开了上述选择性掺杂方法与掩模和蚀刻工艺的组合，用于制造诸如具有用于注入流体的中心微管的微针的结构。

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