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公开(公告)号：AU595310B2
公开(公告)日：1990-03-29
申请号：AU7246987
申请日：1987-05-04
Applicant: STANDARD OIL CO OHIO
Inventor： ONDRIS MIROSLAV , PICHLER MARTY ANTON , BROWNFIELD RICHARD EDWARD
IPC: C25D9/08 , H01L21/368 , H01L31/073 , H01L31/18 , C25D3/54 , C25D5/10 , H01L31/06
Abstract: A method of electrodepositing a doped compound semiconductor film (43) including tellurium and a metal selected from Group IIB of the Period Table of Elements by adding an effective concentration of dopant ions to the electrolyte bath. Cadmium telluride, mercury cadmium telluride and zinc cadmium telluride may be doped with copper, silver and gold. The conductivity type of the electrodeposited doped layers may be changed by a heat treatment. Thin film photovoltaic cells incorporating the doped layer to form a heterojunction with semiconductor layer (42) of the opposite conductivity type show substantial improvements in open circuit voltage, fill factor and efficiency over similar devices employing undoped electrodeposited layers.
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公开(公告)号：IN167516B
公开(公告)日：1990-11-10
申请号：IN274DE1987
申请日：1987-03-31
Applicant: STANDARD OIL CO OHIO
Inventor： ONDRIS MIROSLAV , PICHLER MARTY ANTON , BROWNFIELD RICHARD EDWARD
IPC: C25D9/08 , H01L21/368 , H01L31/073 , H01L31/18 , H01L31/00
Abstract: A method of electrodepositing a doped compound semiconductor film (43) including tellurium and a metal selected from Group IIB of the Period Table of Elements by adding an effective concentration of dopant ions to the electrolyte bath. Cadmium telluride, mercury cadmium telluride and zinc cadmium telluride may be doped with copper, silver and gold. The conductivity type of the electrodeposited doped layers may be changed by a heat treatment. Thin film photovoltaic cells incorporating the doped layer to form a heterojunction with semiconductor layer (42) of the opposite conductivity type show substantial improvements in open circuit voltage, fill factor and efficiency over similar devices employing undoped electrodeposited layers.
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Patent Agency Ranking
公开(公告)号：DE3165157D1
公开(公告)日：1984-09-06
申请号：DE3165157
申请日：1981-03-04
Applicant: STANDARD OIL CO OHIO
IPC: C25B3/25 , B01J23/72 , B01J23/94 , B01J25/00 , B01J27/122 , B01J31/04 , C07B61/00 , C07C67/00 , C07C231/00 , C07C231/06 , C07C103/133 , C07C102/08
Abstract: The activity of a copper-containing catalyst used in the production of amides from nitriles by hydrolysis wherein the copper-containing catalyst serves as at least one electrode in an electrochemical reactor containing a solution including the nitrile to be hydrolysed and water is maintained by applying a direct current to the reactor at least intermittently. The copper containing electrode comprises elemental copper and the direct current may be applied to maintain the partial surface coverage at an average thickness of 0.75 to 12.5 monolayers of ionic copper. The hydrolysis of acrylonitrile to acrylamide is described.
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公开(公告)号：MX168750B
公开(公告)日：1993-06-07
申请号：MX625387
申请日：1987-04-28
Applicant: STANDARD OIL CO OHIO
Inventor： ONDRIS MIROSLAV , PICHLER MARTY ANTON , BROWNFIELD RICHARD EDWARD
IPC: C25D9/08 , H01L21/368 , H01L31/073 , H01L31/18 , C25D5/50 , H01L31/06
Abstract: A method of electrodepositing a doped compound semiconductor film (43) including tellurium and a metal selected from Group IIB of the Period Table of Elements by adding an effective concentration of dopant ions to the electrolyte bath. Cadmium telluride, mercury cadmium telluride and zinc cadmium telluride may be doped with copper, silver and gold. The conductivity type of the electrodeposited doped layers may be changed by a heat treatment. Thin film photovoltaic cells incorporating the doped layer to form a heterojunction with semiconductor layer (42) of the opposite conductivity type show substantial improvements in open circuit voltage, fill factor and efficiency over similar devices employing undoped electrodeposited layers.
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公开(公告)号：BR8702271A
公开(公告)日：1988-02-17
申请号：BR8702271
申请日：1987-05-05
Applicant: STANDARD OIL CO OHIO
Inventor： ONDRIS MIROSLAV , PICHLER MARTY ANTON , BROWNFIELD RICHARD EDWARD
IPC: C25D9/08 , H01L21/368 , H01L31/073 , H01L31/18 , H01L31/00
Abstract: A method of electrodepositing a doped compound semiconductor film (43) including tellurium and a metal selected from Group IIB of the Period Table of Elements by adding an effective concentration of dopant ions to the electrolyte bath. Cadmium telluride, mercury cadmium telluride and zinc cadmium telluride may be doped with copper, silver and gold. The conductivity type of the electrodeposited doped layers may be changed by a heat treatment. Thin film photovoltaic cells incorporating the doped layer to form a heterojunction with semiconductor layer (42) of the opposite conductivity type show substantial improvements in open circuit voltage, fill factor and efficiency over similar devices employing undoped electrodeposited layers.
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公开(公告)号：AU7246987A
公开(公告)日：1987-11-12
申请号：AU7246987
申请日：1987-05-04
Applicant: STANDARD OIL CO OHIO
Inventor： ONDRIS MIROSLAV , PICHLER MARTY ANTON , BROWNFIELD RICHARD EDWARD
IPC: C25D9/08 , H01L21/368 , H01L31/073 , H01L31/18 , C25D3/54 , C25D5/10 , H01L31/06
Abstract: A method of electrodepositing a doped compound semiconductor film (43) including tellurium and a metal selected from Group IIB of the Period Table of Elements by adding an effective concentration of dopant ions to the electrolyte bath. Cadmium telluride, mercury cadmium telluride and zinc cadmium telluride may be doped with copper, silver and gold. The conductivity type of the electrodeposited doped layers may be changed by a heat treatment. Thin film photovoltaic cells incorporating the doped layer to form a heterojunction with semiconductor layer (42) of the opposite conductivity type show substantial improvements in open circuit voltage, fill factor and efficiency over similar devices employing undoped electrodeposited layers.
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公开(公告)号：DE3272221D1
公开(公告)日：1986-08-28
申请号：DE3272221
申请日：1982-12-21
Applicant: STANDARD OIL CO OHIO
Inventor： BALL LAWRENCE ERNEST , GAYLOR VERNA FRANCES , PICHLER MARTY ANTON
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