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公开(公告)号：EP0154483B1
公开(公告)日：1989-12-27
申请号：EP85301251.6
申请日：1985-02-25
Applicant: STC PLC
CPC classification number: C23F4/00 , C23C16/515
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公开(公告)号：EP0156516A2
公开(公告)日：1985-10-02
申请号：EP85301252.4
申请日：1985-02-25
Applicant: STC PLC
CPC classification number: B05D1/62 , B05D3/144 , B05D2201/02 , B29C59/14
Abstract: 5 Discontinuities, e.g. scratches, in a plastics surface are removed by exposing the surface to a pulsed radio frequency plasma comprising a mixture of argon and hydrogen. After melting has been effected the surface is exposed to an argon plasma to effect cross-linking to form a smooth surface layer.
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公开(公告)号：EP0154483A2
公开(公告)日：1985-09-11
申请号：EP85301251.6
申请日：1985-02-25
Applicant: STC PLC
CPC classification number: C23F4/00 , C23C16/515
Abstract: 57 In a pulsed radio frequency plasma deposition process the pulse repetition frequency is matched to the gas exchange rate. This is achieved by using a pulse width of 50 to 500 microseconds and a pulse repetition rate corresponding to the time within which gas is exchanged in the reaction region.
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公开(公告)号：EP0184917B1
公开(公告)日：1990-07-04
申请号：EP85308526.4
申请日：1985-11-25
Applicant: STC PLC
IPC: C23C14/40 , B05D3/06 , C23C14/48 , C23F1/08 , B01J19/08 , H01J37/32 , H01L21/203 , H01L21/306
CPC classification number: H01J37/32458 , C23C16/515 , H01J37/321 , H01J37/32623
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公开(公告)号：EP0184917A1
公开(公告)日：1986-06-18
申请号：EP85308526.4
申请日：1985-11-25
Applicant: STC PLC
IPC: C23C14/40 , B05D3/06 , C23C14/48 , C23F1/08 , B01J19/08 , H01J37/32 , H01L21/203 , H01L21/306
CPC classification number: H01J37/32458 , C23C16/515 , H01J37/321 , H01J37/32623
Abstract: In a pulsed plasma process for surface treatment of a substrate the containing reactor vessel (11) has an inner cross-section conforming to the substrate geometry so as to confine the intense plasma region to the substrate surface (12). Preferably this region should be within 15 to 20 mm of the surface.
Abstract translation: 在用于表面处理衬底的脉冲等离子体工艺中，含有反应器容器（11）具有与衬底几何形状相符的内部横截面，以将强烈的等离子体区域限制在衬底表面（12）上。 优选地，该区域应在表面的15至20mm之内。
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Patent Agency Ranking
公开(公告)号：EP0207767B1
公开(公告)日：1991-03-13
申请号：EP86305036.5
申请日：1986-06-27
Applicant: STC PLC
CPC classification number: H01J37/3244 , C23C16/515
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公开(公告)号：EP0154483A3
公开(公告)日：1986-08-20
申请号：EP85301251
申请日：1985-02-25
Applicant: STC PLC
CPC classification number: C23F4/00 , C23C16/515
Abstract: 57 In a pulsed radio frequency plasma deposition process the pulse repetition frequency is matched to the gas exchange rate. This is achieved by using a pulse width of 50 to 500 microseconds and a pulse repetition rate corresponding to the time within which gas is exchanged in the reaction region.
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公开(公告)号：EP0207767A3
公开(公告)日：1989-02-08
申请号：EP86305036.5
申请日：1986-06-27
Applicant: STC PLC
CPC classification number: H01J37/3244 , C23C16/515
Abstract: An apparatus for pulsed plasma treatment of a substrate surface includes means for removing spent gas from a region adjacent the substrate for each pulse. The apparatus may also include means for sweeping an intense plasma region across a substrate surface. Rapid gas exchange is provided by pressure pulsing the gas admission. This facility also provides means for rapidly alternating different gases.
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公开(公告)号：EP0156516B1
公开(公告)日：1988-06-15
申请号：EP85301252.4
申请日：1985-02-25
Applicant: STC PLC
CPC classification number: B05D1/62 , B05D3/144 , B05D2201/02 , B29C59/14
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公开(公告)号：EP0207767A2
公开(公告)日：1987-01-07
申请号：EP86305036.5
申请日：1986-06-27
Applicant: STC PLC
CPC classification number: H01J37/3244 , C23C16/515
Abstract: An apparatus for pulsed plasma treatment of a substrate surface includes means for removing spent gas from a region adjacent the substrate for each pulse. The apparatus may also include means for sweeping an intense plasma region across a substrate surface. Rapid gas exchange is provided by pressure pulsing the gas admission. This facility also provides means for rapidly alternating different gases.
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