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公开(公告)号：EP0207767A3
公开(公告)日：1989-02-08
申请号：EP86305036.5
申请日：1986-06-27
Applicant: STC PLC
CPC classification number: H01J37/3244 , C23C16/515
Abstract: An apparatus for pulsed plasma treatment of a substrate surface includes means for removing spent gas from a region adjacent the substrate for each pulse. The apparatus may also include means for sweeping an intense plasma region across a substrate surface. Rapid gas exchange is provided by pressure pulsing the gas admission. This facility also provides means for rapidly alternating different gases.
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公开(公告)号：EP0207767A2
公开(公告)日：1987-01-07
申请号：EP86305036.5
申请日：1986-06-27
Applicant: STC PLC
CPC classification number: H01J37/3244 , C23C16/515
Abstract: An apparatus for pulsed plasma treatment of a substrate surface includes means for removing spent gas from a region adjacent the substrate for each pulse. The apparatus may also include means for sweeping an intense plasma region across a substrate surface. Rapid gas exchange is provided by pressure pulsing the gas admission. This facility also provides means for rapidly alternating different gases.
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Patent Agency Ranking
公开(公告)号：EP0184917B1
公开(公告)日：1990-07-04
申请号：EP85308526.4
申请日：1985-11-25
Applicant: STC PLC
IPC: C23C14/40 , B05D3/06 , C23C14/48 , C23F1/08 , B01J19/08 , H01J37/32 , H01L21/203 , H01L21/306
CPC classification number: H01J37/32458 , C23C16/515 , H01J37/321 , H01J37/32623
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公开(公告)号：EP0330371A1
公开(公告)日：1989-08-30
申请号：EP89301494.4
申请日：1989-02-16
Applicant: STC PLC
Inventor： Ojha, Sureshchandra Mishrilal , Jennings, Stephen Robert , Johnston, Anthony Denis , Naden, James Mark
IPC: H01L21/31 , H01L21/285
CPC classification number: H01L21/32137
Abstract: A polysilicon layer or a single crystal silicon substrate is plasma etched in a two staged process. The first stage was a non-selective anisotropic etch to define a desired pattern by etching part way through the polysilicon. The second stage was a selective etch to secure remaining polysilicon and expose the substrate.
Abstract translation: 多晶硅层或单晶硅衬底在两阶段工艺中进行等离子体蚀刻。 第一阶段是通过蚀刻部分地通过多晶硅来定义所需图案的非选择性各向异性蚀刻。 第二阶段是选择性蚀刻以确保剩余的多晶硅并暴露衬底。
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公开(公告)号：EP0184917A1
公开(公告)日：1986-06-18
申请号：EP85308526.4
申请日：1985-11-25
Applicant: STC PLC
IPC: C23C14/40 , B05D3/06 , C23C14/48 , C23F1/08 , B01J19/08 , H01J37/32 , H01L21/203 , H01L21/306
CPC classification number: H01J37/32458 , C23C16/515 , H01J37/321 , H01J37/32623
Abstract: In a pulsed plasma process for surface treatment of a substrate the containing reactor vessel (11) has an inner cross-section conforming to the substrate geometry so as to confine the intense plasma region to the substrate surface (12). Preferably this region should be within 15 to 20 mm of the surface.
Abstract translation: 在用于表面处理衬底的脉冲等离子体工艺中，含有反应器容器（11）具有与衬底几何形状相符的内部横截面，以将强烈的等离子体区域限制在衬底表面（12）上。 优选地，该区域应在表面的15至20mm之内。
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公开(公告)号：EP0207767B1
公开(公告)日：1991-03-13
申请号：EP86305036.5
申请日：1986-06-27
Applicant: STC PLC
CPC classification number: H01J37/3244 , C23C16/515
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公开(公告)号：EP0135993A1
公开(公告)日：1985-04-03
申请号：EP84304691.3
申请日：1984-07-10
Applicant: STC PLC
CPC classification number: G02B6/4427 , C03C25/104 , G02B6/4402 , G02B6/443
Abstract: An optical fibre is provided with a moisture barrier layer by exposing a plastics coating on the fibre to a pulsed plasma in order to modify the surface, for instance by implantation of silicon, and/or to deposit on the plastics layer an inorganic layer for instance a non-stoichiometric composition of silicon and carbon or silicon and nitrogen.
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