公开(公告)号：WO2008048704A3

公开(公告)日：2008-07-03

申请号：PCT/US2007063673

申请日：2007-03-09

Applicant: STC UNM ,  HERSEE STEPHEN M ,  WANG XIN ,  SUN XINYU

Inventor： HERSEE STEPHEN M ,  WANG XIN ,  SUN XINYU

IPC: H01L21/20

CPC classification number: H01L29/413 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/02612 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02642 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/2003 ,  H01L29/775 ,  H01L31/0304 ,  H01L31/035236 ,  H01L31/184 ,  H01L33/18 ,  H01L33/24 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01S5/1042 ,  H01S5/1835 ,  H01S5/18369 ,  H01S5/3428 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S977/762 ,  Y10S977/816 ,  Y10T428/24612 ,  H01L2924/00

Abstract: Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10- 1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

Abstract translation: 示例性实施例提供了包括高质量（即，无缺陷）III-N族纳米线和均匀III-N族纳米线阵列的半导体器件以及它们用于制造的可缩放工艺，其中位置，取向，横截面特征，长度和 每个纳米线的结晶度可以精确控制。 可以使用脉冲生长模式来制造提供约10nm至约1000微米的均匀长度的具有恒定横截面特征的公开的III-N纳米线和/或纳米线阵列，所述恒定横截面特征包括约10-1000nm的示例性直径。 另外，可以通过聚结多个GaN纳米线和/或纳米线阵列来形成高质量的GaN衬底结构以促进可见LED和激光器的制造。 此外，可以通过在每个纳米线的非极性侧壁上的核 - 壳生长来形成核 - 壳纳米线/ MQW有源结构。

公开(公告)号：EP1994552A4

公开(公告)日：2013-11-20

申请号：EP07863327

申请日：2007-03-09

Applicant: STC UNM

Inventor： HERSEE STEPHEN M ,  WANG XIN ,  SUN XINYU

IPC: H01L21/20 ,  C30B29/60

CPC classification number: H01L29/413 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/02612 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02642 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/2003 ,  H01L29/775 ,  H01L31/0304 ,  H01L31/035236 ,  H01L31/184 ,  H01L33/18 ,  H01L33/24 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01S5/1042 ,  H01S5/1835 ,  H01S5/18369 ,  H01S5/3428 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S977/762 ,  Y10S977/816 ,  Y10T428/24612 ,  H01L2924/00

Abstract: Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

公开(公告)号：NZ570678A

公开(公告)日：2010-10-29

申请号：NZ57067807

申请日：2007-03-09

Applicant: STC UNM

Inventor： HERSEE STEPHEN M ,  WANG XIN ,  SUN XINYU

IPC: H01L21/20

Abstract: A method of making nanowires comprising: forming a selective growth mask over a substrate, wherein the selective growth mask comprises a plurality of patterned apertures that expose a plurality of portions of the substrate; using a selective non-pulsed growth mode to grow a semiconductor material on each of the plurality of portions of the substrate exposed in each of the patterned apertures; performing a growth-mode transition from the non-pulsed growth mode to a pulsed growth mode; and forming a plurality of semiconductor nanowires by continuing the pulsed growth mode of the semiconductor material. Also disclosed is a group III-N nanowire array comprising: a substrate; a selective growth mask over the substrate, wherein the selective growth mask comprises a plurality of patterned apertures that expose a plurality of portions of the substrate; and a group III-N nanowire connected to and extending from each of the plurality of portions of the substrate, wherein the group III-N nanowire Is oriented along a single direction and maintains a cross-sectional feature of one of the plurality of selected surface regions, and wherein the group Ill-N nanowire extends over a top of the selective growth mask.

公开(公告)号：AU2007313096A1

公开(公告)日：2008-04-24

申请号：AU2007313096

申请日：2007-03-09

Applicant: STC UNM

Inventor： SUN XINYU ,  HERSEE STEPHEN M ,  WANG XIN

IPC: H01L21/20

Abstract: Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

公开(公告)号：CA2643439A1

公开(公告)日：2008-04-24

申请号：CA2643439

申请日：2007-03-09

Applicant: STC UNM

Inventor： SUN XINYU ,  HERSEE STEPHEN M ,  WANG XIN

IPC: H01L21/20

Abstract: Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

公开(公告)号：CA2643439C

公开(公告)日：2015-09-08

申请号：CA2643439

申请日：2007-03-09

Applicant: STC UNM

Inventor： HERSEE STEPHEN M ,  WANG XIN ,  SUN XINYU

IPC: H01L21/20

Abstract: Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10- 1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

公开(公告)号：BRPI0708752A2

公开(公告)日：2011-06-28

申请号：BRPI0708752

申请日：2007-03-09

Applicant: STC UNM

Inventor： HERSEE STEPHEN M ,  WANG XIN ,  SUN XINYU

IPC: H01L21/20

公开(公告)号：SG170094A1

公开(公告)日：2011-04-29

申请号：SG2011017258

申请日：2007-03-09

Applicant: STC UNM

Inventor： HERSEE STEPHEN M ,  WANG XIN ,  SUN XINYU

Abstract: Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core- shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

公开(公告)号：MX2008011275A

公开(公告)日：2008-11-25

申请号：MX2008011275

申请日：2007-03-09

Applicant: STC UNM

Inventor： HERSEE STEPHEN M ,  WANG XIN ,  SUN XINYU

IPC: H01L21/20

Abstract: Las modalidades ejemplares proporcionan dispositivos semiconductores que incluyen nanoalambres del grupo III-N de calidad alta (esto es, libre de defectos) y configuraciones del nanoalambre del grupo III-N uniforme así como sus procesos escalables para manufactura, donde la posición, orientación, características en sección transversal, longitud y cristalinidad de cada nanoalambre puede ser precisamente controlada. Un modo de crecimiento pulsado puede usarse para fabricar el nanoalambre del grupo III-N descrito y/o configuraciones del nanoalambre proporcionando una longitud uniforme de alrededor de 10 nm hasta alrededor de 1000 micrones con las características en sección transversal constantes incluyendo un diámetro ejemplar de alrededor de 10-1000 nm. Además, las estructuras del substrato GaN de calidad alta pueden formarse por coalescer la pluralidad del nanoalambre GaN y/o configuraciones del nanoalambre para facilitar la fabricación de los LEDs visibles o láseres. Además, las estructuras MW activas/nanoalambre de envolvente-núcleo pueden formarse por un crecimiento del envolvente-núcleo en las paredes laterales no polares de cada nanoalambre.