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    PULSED GROWTH OF GAN NANOWIRES AND APPLICATIONS IN GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE MATERIALS AND DEVICES
    2.
    发明专利
    PULSED GROWTH OF GAN NANOWIRES AND APPLICATIONS IN GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE MATERIALS AND DEVICES 未知

    公开(公告)号：CA2643439C

    公开(公告)日：2015-09-08

    申请号：CA2643439

    申请日：2007-03-09

    Applicant: STC UNM

    Inventor： HERSEE STEPHEN M ,  WANG XIN ,  SUN XINYU

    IPC: H01L21/20

    Abstract: Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10- 1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

    Pulsed growth of GaN nanowires and applications in group III nitride semiconductor substrate materials and devices
    4.
    发明专利
    Pulsed growth of GaN nanowires and applications in group III nitride semiconductor substrate materials and devices 未知

    公开(公告)号：NZ570678A

    公开(公告)日：2010-10-29

    申请号：NZ57067807

    申请日：2007-03-09

    Applicant: STC UNM

    Inventor： HERSEE STEPHEN M ,  WANG XIN ,  SUN XINYU

    IPC: H01L21/20

    Abstract: A method of making nanowires comprising: forming a selective growth mask over a substrate, wherein the selective growth mask comprises a plurality of patterned apertures that expose a plurality of portions of the substrate; using a selective non-pulsed growth mode to grow a semiconductor material on each of the plurality of portions of the substrate exposed in each of the patterned apertures; performing a growth-mode transition from the non-pulsed growth mode to a pulsed growth mode; and forming a plurality of semiconductor nanowires by continuing the pulsed growth mode of the semiconductor material. Also disclosed is a group III-N nanowire array comprising: a substrate; a selective growth mask over the substrate, wherein the selective growth mask comprises a plurality of patterned apertures that expose a plurality of portions of the substrate; and a group III-N nanowire connected to and extending from each of the plurality of portions of the substrate, wherein the group III-N nanowire Is oriented along a single direction and maintains a cross-sectional feature of one of the plurality of selected surface regions, and wherein the group Ill-N nanowire extends over a top of the selective growth mask.

    Pulsed growth of GaN nanowires and applications in group III nitride semiconductor substrate materials and devices
    5.
    发明专利
    Pulsed growth of GaN nanowires and applications in group III nitride semiconductor substrate materials and devices 未知

    公开(公告)号：AU2007313096A1

    公开(公告)日：2008-04-24

    申请号：AU2007313096

    申请日：2007-03-09

    Applicant: STC UNM

    Inventor： SUN XINYU ,  HERSEE STEPHEN M ,  WANG XIN

    IPC: H01L21/20

    Abstract: Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

    PULSED GROWTH OF GAN NANOWIRES AND APPLICATIONS IN GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE MATERIALS AND DEVICES
    7.
    发明专利
    PULSED GROWTH OF GAN NANOWIRES AND APPLICATIONS IN GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE MATERIALS AND DEVICES 未知

    公开(公告)号：MY149865A

    公开(公告)日：2013-10-31

    申请号：MYPI20083234

    申请日：2007-03-09

    Applicant: STC UNM

    Inventor： HERSEE STEPHEN M ,  XIN WANG ,  XINYU SUN

    IPC: H01L21/00

    Abstract: EXEMPLARY EMBODIMENTS PROVIDE SEMICONDUCTOR DEVICES INCLUDING HIGH-QUALITY (I.E., DEFECT FREE) GROUP III-N NANOWIRES AND UNIFORM GROUP III-N NANOWIRE ARRAYS AS WELL AS THEIR SCALABLE PROCESSES FOR MANUFACTURING, WHERE THE POSITION, ORIENTATION, CROSS-SECTIONAL FEATURES, LENGTH AND THE CRYSTALLINITY OF EACH NANOWIRE CAN BE PRECISELY CONTROLLED. A PULSED GROWTH MODE CAN BE USED TO FABRICATE THE DISCLOSED GROUP III-N NANOWIRES AND/OR NANOWIRE ARRAYS PROVIDING A UNIFORM LENGTH OF ABOUT 10 NM TO ABOUT 1000 MICRONS WITH CONSTANT CROSS-SECTIONAL FEATURES INCLUDING AN EXEMPLARY DIAMETER OF ABOUT 10-1000 NM. IN ADDITION, HIGH-QUALITY GaN SUBSTRATE STRUCTURES CAN BE FORMED BY COALESCING THE PLURALITY OF GaN NANOWIRES AND/OR NANOWIRE ARRAYS TO FACILITATE THE FABRICATION OF VISIBLE LEDs AND LASERS. FURTHERMORE, CORE-SHELL NANOWIRE/MQW ACTIVE STRUCTURES CAN BE FORMED BY A CORE-SHELL GROWTH ON THE NONPOLAR SIDEWALLS OF EACH NANOWIRE AND CAN BE CONFIGURED IN NANOSCALE PHOTOELECTRONIC DEVICES SUCH AS NANOWIRE LEDs AND/OR NANOWIRE LASERS TO PROVIDE TREMENDOUSLY-HIGH EFFICIENCIES.

    PULSED GROWTH OF GAN NANOWIRES AND APPLICATIONS IN GROUP IIINITRIDE SEMICONDUCTOR SUBSTRATE MATERIALS AND DEVICES
    9.
    发明专利
    PULSED GROWTH OF GAN NANOWIRES AND APPLICATIONS IN GROUP IIINITRIDE SEMICONDUCTOR SUBSTRATE MATERIALS AND DEVICES 未知

    公开(公告)号：CA2643439A1

    公开(公告)日：2008-04-24

    申请号：CA2643439

    申请日：2007-03-09

    Applicant: STC UNM

    Inventor： SUN XINYU ,  HERSEE STEPHEN M ,  WANG XIN

    IPC: H01L21/20

    Abstract: Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

    PULSED GROWTH OF GAN NANOWIRES AND APPLICATIONS IN GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE MATERIALS AND DEVICES
    10.
    发明专利
    PULSED GROWTH OF GAN NANOWIRES AND APPLICATIONS IN GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE MATERIALS AND DEVICES 未知

    公开(公告)号：SG170094A1

    公开(公告)日：2011-04-29

    申请号：SG2011017258

    申请日：2007-03-09

    Applicant: STC UNM

    Inventor： HERSEE STEPHEN M ,  WANG XIN ,  SUN XINYU

    Abstract: Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core- shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

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