公开(公告)号：MY149865A

公开(公告)日：2013-10-31

申请号：MYPI20083234

申请日：2007-03-09

Applicant: STC UNM

Inventor： HERSEE STEPHEN M ,  XIN WANG ,  XINYU SUN

IPC: H01L21/00

Abstract: EXEMPLARY EMBODIMENTS PROVIDE SEMICONDUCTOR DEVICES INCLUDING HIGH-QUALITY (I.E., DEFECT FREE) GROUP III-N NANOWIRES AND UNIFORM GROUP III-N NANOWIRE ARRAYS AS WELL AS THEIR SCALABLE PROCESSES FOR MANUFACTURING, WHERE THE POSITION, ORIENTATION, CROSS-SECTIONAL FEATURES, LENGTH AND THE CRYSTALLINITY OF EACH NANOWIRE CAN BE PRECISELY CONTROLLED. A PULSED GROWTH MODE CAN BE USED TO FABRICATE THE DISCLOSED GROUP III-N NANOWIRES AND/OR NANOWIRE ARRAYS PROVIDING A UNIFORM LENGTH OF ABOUT 10 NM TO ABOUT 1000 MICRONS WITH CONSTANT CROSS-SECTIONAL FEATURES INCLUDING AN EXEMPLARY DIAMETER OF ABOUT 10-1000 NM. IN ADDITION, HIGH-QUALITY GaN SUBSTRATE STRUCTURES CAN BE FORMED BY COALESCING THE PLURALITY OF GaN NANOWIRES AND/OR NANOWIRE ARRAYS TO FACILITATE THE FABRICATION OF VISIBLE LEDs AND LASERS. FURTHERMORE, CORE-SHELL NANOWIRE/MQW ACTIVE STRUCTURES CAN BE FORMED BY A CORE-SHELL GROWTH ON THE NONPOLAR SIDEWALLS OF EACH NANOWIRE AND CAN BE CONFIGURED IN NANOSCALE PHOTOELECTRONIC DEVICES SUCH AS NANOWIRE LEDs AND/OR NANOWIRE LASERS TO PROVIDE TREMENDOUSLY-HIGH EFFICIENCIES.

公开(公告)号：ZA200807182B

公开(公告)日：2009-08-26

申请号：ZA200807182

申请日：2008-08-20

Applicant: STC UNM RES & TECHNOLOGY LAW

Inventor： HERSEE STEPHEN M ,  XIN WANG ,  XINYU SUN

IPC: H01L20090101