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    PHOTOVOLTAIC CELL AND METHOD FOR MANUFACTURING SUCH A PHOTOVOLTAIC CELL
    1.
    发明申请
    PHOTOVOLTAIC CELL AND METHOD FOR MANUFACTURING SUCH A PHOTOVOLTAIC CELL 审中-公开
    光伏电池和制造这种光伏电池的方法

    公开(公告)号：WO2014196860A3

    公开(公告)日：2015-03-26

    申请号：PCT/NL2014050364

    申请日：2014-06-06

    Applicant: STICHTING ENERGIE

    Inventor： ROMIJN INGRID GERDINA ,  ANKER JOHN ,  SAYNOVA DESISLAVA SIMEONOVA ,  BURGERS ANTONIUS RADBOUD ,  KOPPES MARTIEN ,  GUTJAHR ASTRID

    IPC: H01L31/068 ,  H01L31/18

    CPC classification number: H01L31/065 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A photovoltaic cell includes a semiconductor substrate of a first conductivity type, with a first surface arranged with a highly doped surface field layer of the first conductivity type. The substrate has on the highly doped surface field layer at least one contacting area for contacting the surface field layer with a respective contact. In the first surface at the location of said at least one contacting area a doping concentration in the highly doped surface field layer is increased relative to the doping concentration in the surface area outside the first contacting area, and in the first surface at the location of each contacting area the highly doped surface field layer has a profile depth that is larger than a profile depth of the doped surface field layer outside the contacting area.

    Abstract translation: 光伏电池包括第一导电类型的半导体衬底，第一表面布置有第一导电类型的高掺杂表面场层。 衬底在高度掺杂的表面场层上具有用于使表面场层与各自的接触面接触的至少一个接触区域。 在所述至少一个接触区域的位置处的第一表面中，高掺杂表面场层中的掺杂浓度相对于在第一接触区域外的表面区域中的掺杂浓度增加，并且在第一表面中 每个接触区域，高度掺杂的表面场层具有大于接触区域外的掺杂表面场层的轮廓深度的轮廓深度。

    PHOTOVOLTAIC CELL AND METHOD FOR MANUFACTURING SUCH A PHOTOVOLTAIC CELL.
    4.
    发明专利
    PHOTOVOLTAIC CELL AND METHOD FOR MANUFACTURING SUCH A PHOTOVOLTAIC CELL. 未知

    公开(公告)号：NL2010941C2

    公开(公告)日：2014-12-09

    申请号：NL2010941

    申请日：2013-06-07

    Applicant: STICHTING ENERGIE

    Inventor： ROMIJN INGRID GERDINA ,  ANKER JOHN ,  SAYNOVA DESISLAVA SIMEONOVA ,  BURGERS ANTONIUS RADBOUD ,  KOPPES MARTIEN ,  GUTJAHR ASTRID

    IPC: H01L31/068 ,  H01L31/18

    Abstract: A photovoltaic cell includes a semiconductor substrate of a first conductivity type, with a first surface arranged with a highly doped surface field layer of the first conductivity type. The substrate has on the highly doped surface field layer at least one contacting area for contacting the surface field layer with a respective contact. In the first surface at the location of the at least one contacting area a doping concentration in the highly doped surface field layer is increased relative to the doping concentration in the surface area outside the first contacting area, and in the first surface at the location of each contacting area the highly doped surface field layer has a profile depth that is larger than a profile depth of the doped surface field layer outside the contacting area.

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